Allicdata Part #: | BSG0811NDATMA1TR-ND |
Manufacturer Part#: |
BSG0811NDATMA1 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 19A/41A 8TISON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1... |
DataSheet: | BSG0811NDATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.68473 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 19A, 41A |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 12V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
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The BSG0811NDATMA1 is a powerful 8-channel N-channel mosfet (MOSFET) array that is used in various power management applications. The device features an integrated 8-channel N-channel MOSFET array with a maximum drain to source current rating of 30A and an extremely low on-resistance of 26mΩ. It is ideal for use in power management applications such as DC motor drives, LED lighting, and battery chargers.
The BSG0811NDATMA1 is built using a unique super-junction process technology that provides low on-resistance and high switching speed. This technology also enables the device to have very low input and output capacitances, which allows it to operate efficiently in high-speed switching applications. Additionally, the device is designed with a low RDS(ON) tolerance and a high avalanche current rating, which further enhances the device’s power efficiency and performance. The device also features a built-in thermal shutdown and an ESD protection circuit to safeguard against over-temperature and ESD events.
The BSG0811NDATMA1 is primarily used in power management applications, primarily in applications where power is switched between devices or circuits. This includes applications like DC motor drives, LED lighting systems, and battery chargers. The device’s low on-resistance and high-speed switching capabilities allow it to switch between loads at high speeds, while its low power dissipation enables extended battery life in battery-powered applications. Additionally, the device is suitable for use in a variety of environments and can withstand temperatures ranging from -40°C to +125°C.
The BSG0811NDATMA1 is typically used with a source resistor that is connected to the gate of each channel on the array. An external power supply supplies voltage to the drain of each channel. When a voltage is applied to the gate of a channel, current passes through the channel and the drain is connected to the power supply. As the gate voltage is varied, the current level in the channel can be adjusted to control the flow of power. This control makes the device ideal for applications that require a high level of control over the power being supplied.
The BSG0811NDATMA1 is a versatile and powerful 8-channel N-channel MOSFET array that is designed to provide reliable and efficient power management in a variety of applications. Its low on-resistance and high-speed switching capabilities make it an excellent choice for applications that require high levels of power control and efficiency. Additionally, its built-in thermal protection and ESD protection make it an excellent choice for applications that are subject to extreme environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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