BSL296SNH6327XTSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSL296SNH6327XTSA1, also known as a single trench MOSFET, is a power semiconductor device. It is a type of Field Effect Transistor (FET) that uses metal oxide insulation to regulate voltage and current between source and drain contacts in an electronic circuit. This type of MOSFET is often used for amplifying and switching electrical signals on PCBs, is widely used in applications such as power supplies, welding equipment, DC/DC converters, solar converters, battery protection and charging, and motor control.

The BSL296SNH6327XTSA1 consists of a MOS structure with a high-density trench containing hundreds of gate electrodes on top of a heavily-doped substrate. It is based on advanced trench-silicon technology in which the trench structure isolates the gate electrodes from the substrate. The main difference between this MOSFET and other FETs is the high density of its gate electrodes. This makes it suitable for applications which require a higher level of power efficiency and strength.

The BSL296SNH6327XTSA1 is ideal for applications that require high power efficiency and high current capacity. It has a nominal drain current of 12 A and a drain-source voltage of 200 V, making it suitable for use as a switching element in power supplies and other power-electronics. It also has high reverse blocking capability and fast switching speed that allows it to handle high- frequency switching operations.

In addition to its power-efficient characteristics, the BSL296SNH6327XTSA1 is also characterized by high breakdown voltage, low gate threshold voltage, low thermal resistance and high-source-drain-breakdown (BTB) voltage. These features make the MOSFET suitable for high-efficiency power conversion and regulation in AC & DC power control circuits.

The working principle of the BSL296SNH6327XTSA1 is based on the electron field effect. A gate voltage is applied to the MOSFET, which creates an electric field in the channel between the drain and source terminals. This field modulates hole or electron carrier concentration in the channel, depending on whether the voltage is positive or negative. This modulated carrier concentration changes the drain-to-source resistance and activities of the source-drain current, and thereby controls current flow through the device.

In conclusion, the high-density, single trench MOSFET BSL296SNH6327XTSA1 is a power semiconductor device designed to provide efficient power conversion and regulation. Its high breakdown voltage, low gate threshold voltage and low thermal resistance make it ideal for applications in DC/DC converters, solar converters, welding equipment, power supplies, battery protection and charging, and motor control. The working principle of the device is based on the electron field effect, and it relies on a gate voltage to modulate the carrier concentration in the channel between the drain and source terminals in order to control current flow.

The specific data is subject to PDF, and the above content is for reference