BSM150GB170DN2HOSA1 Allicdata Electronics
Allicdata Part #:

BSM150GB170DN2HOSA1-ND

Manufacturer Part#:

BSM150GB170DN2HOSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT 1700V
More Detail: IGBT Module Half Bridge 1700V 220A 1250W Chassis ...
DataSheet: BSM150GB170DN2HOSA1 datasheetBSM150GB170DN2HOSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 220A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
Current - Collector Cutoff (Max): 1.5mA
Input Capacitance (Cies) @ Vce: 20nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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BSM150GB170DN2HOSA1 is a type of Insulated Gate Bipolar Transistors (IGBTs) Module and is extensively used across many industrial and commercial applications. This type of device has a low on-state voltage drop, fast switching speed, and high-temperature tolerance. It can be used for direct current (DC) switching and as an output device for DC/AC conversion. There is also an array of types of IGBTs Modules available of which BSM150GB170DN2HOSA1 is a common example.

An IGBT Module typically consists of several IGBTs, diode blocks and voltage control components. It also features an insulated gate driver (IGD) which is used to drive the gate of the IGBT and turn it on or off. When the high-side IGBT is switched on, it will be held on by the diode block, even if the gate driver is powered off. As a result, the IGBTs can operate at very high voltages to generate impressive amounts of power.

The fundamental operating principle of IGBTs Modules is based on the Gated Diode which is a combination of a p-channelMOSFET and a diode. The MOSFET serves as the controlled switch, while the diode allows the voltage to flow in the direction it is meant to when the switch is turned off. By varying the gate voltage, the resistance between the source and drain is varied and therefore, the currentflow can be controlled, allowing it to be used for various applications.

BSM150GB170DN2HOSA1 is used in a wide range of applications, such as electric vehicle traction motors, inverters, UPS systems, pulse power supplies and electric power tools. It is also used in motor drives, solar energy storage systems, and other high-power electric motor applications. The device also has low noise operation, making it suitable for sensitive applications. This type of module is highly reliable and the ability to maintain a low on-state voltage offers improved efficiency in power conversion. It can also be used in other industrial systems to switch DC and AC power in order to carry out complex tasks.

In summary, BSM150GB170DN2HOSA1 is a type of IGBTs Modules which is widely used in various industrial and commercial applications. It consists of several IGBTs, diode blocks and voltage control components with an IGD to control the gate of the IGBTs. The operating principle of IGBT Modules is based on the Gated Diode, allowing current flow to be controlled. BSM150GB170DN2HOSA1 is suitable for electric vehicle traction motors, inverters, UPS systems, pulse power supplies, electric power tools and other high-power electric motor applications.

The specific data is subject to PDF, and the above content is for reference

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