| Allicdata Part #: | BSM200GA120DN2HOSA1-ND |
| Manufacturer Part#: |
BSM200GA120DN2HOSA1 |
| Price: | $ 92.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 2 MED POWER 62MM-2 |
| More Detail: | IGBT Module Single Switch 1200V 300A 1550W Chassi... |
| DataSheet: | BSM200GA120DN2HOSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 84.31360 |
| Series: | -- |
| Part Status: | Not For New Designs |
| IGBT Type: | -- |
| Configuration: | Single Switch |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 300A |
| Power - Max: | 1550W |
| Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 4mA |
| Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
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The BSM200GA120DN2HOSA1 module is a member of the IGBT family. IGBTs are a type of transistor designed for high power applications. They are based on junction field effect transistors and have several advantages over their predecessors.
The BSM200GA120DN2HOSA1 is a high-voltage and high-power device. It is rated at 200 A and has a maximum collector-emitter voltage of 1200 V. It is suitable for applications requiring high current, such as PV inverters, UPS systems, and switching power supplies.
The device has a gain-bandwidth product of 30 MHz, allowing it to operate at higher switching frequencies than many other IGBT modules. It is a hybrid device, meaning it has a built-in diode that provides reverse blocking capability. It also has a fast reverse recovery time for improved thermal performance.
The BSM200GA120DN2HOSA1 works by controlling current flow through its gate. When the gate is open, current can flow from the anode to the cathode. When it is closed, current is blocked. This allows for precise control of current flow in circuits, and is used in a variety of applications.
The main advantage of the BSM200GA120DN2HOSA1 is its high power rating. This allows it to handle loads up to 1200 V and 200 A. It also has a high voltage rating, up to 1200 V, which means it can handle a wide range of voltages. This makes it suitable for a variety of applications, including PV inverters, UPS systems, and switching power supplies.
The device also has a fast switching speed, up to 30 MHz. This increases the efficiency of circuits in which it is used, as it reduces the time required to transition between different states. Additionally, its fast reverse recovery time allows it to work in high efficiency heating applications.
The device is well-suited for use in a variety of applications, from industrial to consumer. It is used in high-powered motor drives, power supply regulation, and lighting control. It is also used in applications that require high switching frequencies, such as in motor drive applications.
Overall, the BSM200GA120DN2HOSA1 IGBT module is a reliable and efficient device. It is suitable for a variety of high-powered applications, from motor drives to lighting control. It has a high power rating, a high voltage rating, and a fast switching speed. It is also easy to use and has a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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BSM200GA120DN2HOSA1 Datasheet/PDF