BSM200GB120DN2HOSA1

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The BSM200GB120DN2HOSA1 is an IGBT Module made with HiPerFET technology. HiPerFET technology is an advanced process developed by Shindengen that increases the efficiency and reliability of their IGBT Modules. The module is designed to be used as a power supply or as a high power driver for motor control applications. The module provides high switching speed, low noise, and high breakdown voltage.

The BSM200GB120DN2HOSA1 is a power device that is designed for high-power applications. It has a maximum VCE(SAT) of 600 volts and a maximum current rating of 200 amperes. The BSM200GB120DN2HOSA1 can handle large surges of current, making it ideal for applications such as motor control, or where power needs to be switched on and off quickly. The module is also an efficient device and has a low switching loss.

The BSM200GB120DN2HOSA1 has various applications in the industrial and automotive industry. It can be used as a voltage regulator, a DC to DC converters, AC to DC converters, or in overall motor control systems. In the automotive sector it can be used in internal combustion engines, electric vehicles and fuel cells. In the industrial sector it can be used in variable speed drives, welding applications and renewable energy systems.

The BSM200GB120DN2HOSA1 is designed with a variety of features, such as a high breakdown voltage and low EMI. The module has an allowable surge current of 300A, which is 3 times higher than general IGBT modules. It also has low power dissipation, making it an efficient module for applications that require large amounts of current. The module also has a thermal protection circuit, so that it will shut down if it gets too hot.

The working principle behind the BSM200GB120DN2HOSA1 is similar to that of other IGBT modules. It consists of two switching elements, a diode, and an insulated gate transistor. The diode conducts when the source voltage is higher than the gate voltage, and it blocks current when the gate voltage is higher than the source voltage. The insulated gate transistor acts as a switch, allowing current to flow when the gate voltage is higher than the threshold voltage. When the current is flowing, it produces a voltage drop across the IGBT, which is known as the voltage drop.

The BSM200GB120DN2HOSA1 is an efficient and reliable power device, and it is suitable for a wide range of applications. It is capable of switching large amounts of power, and its high breakdown voltage, low EMI and thermal protection are all useful features. The working principle behind the module is similar to that of other IGBTs, with a diode and an insulated gate transistor providing the switching elements. With its advanced HiPerFET technology, the BSM200GB120DN2HOSA1 is suitable for applications such as DC to DC converters, variable speed drives, and welding applications.

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