BSM300D12P2E001

Series:	--
Packaging:	Tray
Part Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	300A
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	35000pF @ 10V
Power - Max:	1875W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction of BSM300D12P2E001

BSM300D12P2E001 is an array of MOSFETs. It is a perfect N-channel device that can be used for a width range of applications from fast switching with low gate charge to PV-driving. It offers medium drain current and low on-resistance up to 40V drain-source voltage.

Application Field of BSM300D12P2E001

BSM300D12P2E001 can be widely applied in many areas. It is mainly used in LED lighting, automotive, industrial and solar power.For LED lighting applications, BSM300D12P2E001 can be used as a driver in LED bulbs, downlights and spotlights. It is suitable for power saving, low noise and high efficiency illumination.For automotive use, it is ideal for controlling power switching, signal transmission and down-stream application. In order to ensure the smooth operation of an automobile, it must ensure reliable and stable performance. BSM300D12P2E001 can provide the required output current and voltage to achieve this purpose.For industrial use, it can control many power switching processes. BSM300D12P2E001 can provide consistent and reliable performance supporting higher speed process rate and minimizing downtime.And for solar power applications, this MOSFET device has high efficiency of power conversion and low thermal resistance, ensuring reliable operation and high performance under demanding environmental conditions.

Working Principle of BSM300D12P2E001

This device is an array of MOSFETs, which means it is basically a transistor-like device that is used for switching purposes.When a voltage is applied to the gate of the MOSFET, it forms a channel between the source and the drain, allowing current to pass from the source to the drain. This process is called electron conduction. When the voltage to the gate of the MOSFET is removed, the channel is cut off, disallowing current to flow from source to drain. This is called electron barrier.The MOSFET works according to these two principles to control the current and voltage between the two ends. BSM300D12P2E001 MOSFET can provide excellent switching performance and low on-resistance, making it ideal for many applications.

Conclusion

To sum up, BSM300D12P2E001 is a highly efficient N-channel array of MOSFETs. Its features such as low on-resistance, fast switching and medium drain current makes it an ideal device for many applications such as LED lighting, automotive, industrial and solar power. Moreover, it works according to the two principles of electron conduction and electron barrier to provide reliable performance in various demanding circumstances.

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