BSS138BK,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1141-2-ND |
Manufacturer Part#: |
BSS138BK,215 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V TO-236AB |
More Detail: | N-Channel 60V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Su... |
DataSheet: | BSS138BK,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04183 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta), 1.14W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 56pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 350mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 360mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS138BK,215 Application Field and Working Principle
BSS138BK,215 is an enhancement-mode (normally-off) field-effect transistor (FET) designed for analog switching, sample and hold circuits, multiplexers, and digital decoding applications. It is a single, n-channel, low-voltage FET that is able to operate down to 0.9 volts. This transistor is usually found in electronic equipment such as TV, DVD or VCR as well as home audio systems, mobile phones, and radios, which have very low-voltage requirements.
Features
- 0.9 volts drain-to-source voltage
- 12 volts maximum gate-to-source voltage
- 0.78 amperes drain current
- 20 pF gate-to-source capacitance
- 4 ohms typical drain-to-source on-state resistance
- 45 nano seconds switching speed
Working Principle
The BSS138BK,215 can be described as a voltage controlled switch. It works as a three-terminal device with an input (gate), output (drain) and common (source) pin. This FET is based on the metal oxide semiconductor (MOS) capacitance structure and uses an oxide gate to control a conductive channel between the source and drain, which are the two terminal ends of the MOSFET. When the gate is not connected, the source and drain are connected to each other and the channel between them is closed. No current flows. On the other hand, when a voltage is applied to the gate and increases, the channel between the source and drain opens, allowing current to flow from source to drain.
The BSS138BK,215 also has a low input bias current, low-voltage operation, high speed switching, and high-frequency characteristics that allow for signals to be transmitted very quickly over long distances. It also has low on-state resistance and low gate-source capacitance, allowing for minimal power loss and little noise.
Conclusion
The BSS138BK,215 is a single n-channel FET used in many low-voltage applications. With its features such as low input bias current and high switching speed, it is suitable for sample and hold circuits, multiplexers, analog switches, and digital decoding. It can also be used in TV, DVD, home audio equipment, mobile phones, and radios due to its low voltage operation. The transistor is controlled by a gate voltage, which when increased will turn the transistor “on”, allowing current to flow from source to drain.
The specific data is subject to PDF, and the above content is for reference
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