BUJ100LR,126

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 400mA, 5V
Power - Max:	2.1W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BUJ100

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Applications of BUJ100LR, 126

BUJ100LR,126 is indicated for use in power switching, amplifiers, drivers and pre-amplifier circuits. It is primarily used as a medium range power transistor in audio amplifiers and motor drivers. This bjt also finds its application in high current switching such as solenoid and relay drivers. BUJ100LR,126 can also be used as an amplifier in electronic control systems, as a power control switch in battery powered circuits and in high voltage pulse generation circuits. Furthermore, it is used in interface circuits, voltage regulators and switching applications.

Key Specifications

The key specifications of BUJ100LR,126 are as follows.

• Collector-emitter voltage rating: 40V
• Collector-base voltage rating: 40V
• Emitter-base voltage rating: 5V
• Current-gain ratio: 800 - 1500
• Power Dissipation: 0.4W
• Operating Frequency: 150MHz

Working Principle

BJTs have three regions: base, collector and emitter. BUJ100LR,126 has a NPN structure (N-type material is used for the base and collector region, and P-type material is used for the emitter region). The number of additional electrons injected into N-type material is significantly higher than in P-type material, so the base-emitter junction of a BJT is more similar to a diode than the base-collector junction. When a voltage is applied at the base-emitter terminals, a current flows through the base, thus turning the transistor “on”. The collector is connected to the power supply and the emitter is connected to ground. As the current flows through the base, some of it is passed on to the emitter and the rest is diverted away from the collector, creating a voltage drop across the collector-emitter junction. This voltage drop is what amplifies the signal in a BJT, making it a key component in many amplifiers.

Conclusion

BUJ100LR,126 is a NPN silicon junction transistor belonging to the bipolar family of transistors. It is indicated for use in many different applications, including power switching, amplifiers, drivers and pre-amplifier circuits; as well as high current switching such as solenoid and relay drivers. It has a voltage rating of 40V for collector-emitter and collector-base, and an emitter-base voltage rating of 5V. The current gain ratio is between 800 - 1500. The key component of a BJT is the voltage drop across the base-collector junction, and it is what amplifies the signal in the transistor.

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