Allicdata Part #: | 568-9564-2-ND |
Manufacturer Part#: |
BUK761R3-30E,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 120A D2PAK |
More Detail: | N-Channel 30V 120A (Tc) 357W (Tc) Surface Mount D2... |
DataSheet: | BUK761R3-30E,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11960pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 357W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK761R3-30E,118 is a Single-channel P-Channel Enhancement Mode Field Effect Transistor (FET). It is manufactured with a high cell density trench technology process and offers very fast switching times. The BUK761R3-30E,118 is ideal for use in high-speed, high-temperature switching applications as it is capable of operating over a wide temperature range.
The BUK761R3-30E,118 allows current to flow from the drain to the source when a positive voltage is applied to the gate. Conversely, no current flows if no voltage is applied to the gate. This makes the BUK761R3-30E,118 ideal for applications where it is necessary to control the flow of current.
The BUK761R3-30E,118 enables very fast switching speeds, with a maximum switching time of 0.8 nanoseconds. This makes it ideal for use in high-speed, high-temperature switching applications. The device is also highly resistant to electrical noise and has low power consumption. The BUK761R3-30E,118 is also compatible with standard logic families and can also be used with TTL and CMOS logic.
The BUK761R3-30E,118 is used in a variety of applications, including power supply and power management circuitry, power management systems, communications systems, and computer and multimedia applications. It is also used in automotive electronics and in medical devices. The device can be used to control the power output of a power supply, to regulate the voltage and current supplied to a device, and to reduce power consumption.
The BUK761R3-30E,118 is also used in control and logic applications, where it can be used to control the flow of signals and data. The device can be used to control the speed of motors and electronic fans, as well as for temperature and pressure control. It is also used in robotics and motion control systems, as it has low input capacitance and can process signals quickly.
In summary, the BUK761R3-30E,118 is a single-channel P-Channel Enhancement Mode Field Effect Transistor (FET). It is capable of operating over a wide temperature range and offers very fast switching times. The device is used in a variety of applications, including power management systems, communications systems, power supply and power management circuitry, automotive electronics and medical devices. It is also used in control and logic applications, where it can be used to control the flow of signals and data. The device is highly resistant to electrical noise and has low power consumption.
The specific data is subject to PDF, and the above content is for reference
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