BUK7K5R1-30E,115 Allicdata Electronics
Allicdata Part #:

1727-7266-2-ND

Manufacturer Part#:

BUK7K5R1-30E,115

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 30V 40A LFPAK56D
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 40A 68W Surfac...
DataSheet: BUK7K5R1-30E,115 datasheetBUK7K5R1-30E,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.44600
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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BUK7K5R1-30E is a N-Channel logic level power metal-oxide semiconductor field-effect transistor (MOSFET) array. A MOSFET array is a device made up of multiple metal-oxide metal semiconductors connected in parallel or arranged in an array. FET arrays are used in a variety of applications in the fields of computing, telecommunications, digital and analog electronics, power management, and motor control.

BUK7K5R1-30E is a low RDS(on) and low VGS(th) N-channel MOSFET array. It consists of three independent N-channel enhancement-mode power MOSFETs in a single package. It is well suited for displaying applications where low-side switching is required. Besides, it has been specifically designed to minimize switching losses in the design of power factor correction (PFC) boost diode-MOSFET combinations. The array offers a high level of integration and comes in a 4-pin Mini-SO-8 package.

The working principle of the BUK7K5R1-30E is power switching. It allows electric current to pass through a device based on an applied electric voltage. In its simplest form, a MOSFET array can be used to switch on or off electric current. Power MOSFETs, including BUK7K5R1-30E, are designed to switch high electric currents, offering both low conduction and switching losses.

The BUK7K5R1-30E is a one cell array with each of the three FETs having an RDS(on) of 30 mΩ or less at 10V. This most economical array is suitable for applications in AC/DC and DC/DC converters, server power supplies, LCD TVs as well as in set-top boxes and industrial environment. Additionally, it can also be used in motor control, motion control and lighting applications.

The power efficiency of this power MOSFET array is maximized by its low RDS(on) and low VGS(th), resulting in lower conduction and switching losses. This array has been designed for SMPS and PFC applications, ensuring high safety and reliability. The BUK7K5R1-30E array has outstanding ESD protection, as well as high noise immunity, which makes it suitable for a number of consumer applications.

In summary, the BUK7K5R1-30E is a N-Channel Logic Level power MOSFET array. It is an economical array with three independent N-Channel enhancement-mode power MOSFETs in a single package and has a low RDS(on) of 30 mΩ or less at 10V. It is well suited for displaying applications where low-side switching is required and can be used in AC/DC and DC/DC converters and other applications that require high power efficiency. In addition, the array offers excellent ESD protection and high noise immunity, making it a reliable and safe choice for many consumer applications.

The specific data is subject to PDF, and the above content is for reference

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