BUK9Y07-30B,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-4610-2-ND |
| Manufacturer Part#: |
BUK9Y07-30B,115 |
| Price: | $ 0.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 75A LFPAK |
| More Detail: | N-Channel 30V 75A (Tc) 105W (Tc) Surface Mount LFP... |
| DataSheet: | BUK9Y07-30B,115 Datasheet/PDF |
| Quantity: | 1500 |
| 1500 +: | $ 0.28540 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 105W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 28.1nC @ 5V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9Y07-30B,115 FET is a dual N-channel,30V, 4.5A transistor with a maximum drain-source pulse current of 14A.It is a member of the BUK9Yxx family of FET transistors which includes transistors with an RDS(on) resistance of 0.20Ω or less, making them suitable for high-current, low-power applications.The BUK9Y07-30B,115 is a dual-gate FET, meaning it has two gates that are independently operational.Each gate has a Vgs threshold voltage that controls how much current is passed through each channel.The transistor also has high ESD protection and can withstand up to 2000V in Human Body Model, making it extremely reliable in environments with high levels of electrostatic discharges.In terms of its application field,the BUK9Y07-30B,115 is ideal for use in high-current, low-voltage power management applications such as DC-DC converters and audio amplifiers.It is also often used as a switch in digital circuits and amplifiers, as it can provide a low-resistance connection between its drain and source.It is also widely used in robotics and automation applications.The working principle of the BUK9Y07-30B,115 is quite straightforward.When the gate voltage is 0V, the FET is off and the current will not flow between the source and the drain.When the gate voltage rises above the threshold voltage, the FET is on and the current will flow between the source and the drain.The gate voltage must be held constant during operation to ensure the FET continues to be in the correct state.In conclusion, the BUK9Y07-30B,115 is a dual-gate FET transistor with an RDS(on) resistance of 0.20Ω or less, making it ideal for high-current, low-voltage power management applications.It has high ESD protection and can withstand up to 2000V in Human Body Model.The BUK9Yxx family of FET transistors is one of the most reliable, versatile and cost-effective FETs available on the market, making them the perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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BUK9Y07-30B,115 Datasheet/PDF