BUK9Y8R7-60E,115

Vgs(th) (Max) @ Id:	2.1V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	147W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4570pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	86A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to BUK9Y8R7-60E,115

The BUK9Y8R7-60E,115 is a standard FET device made of a single N-channel MOSFET. This FET device is one of the most common transistors on the market, and is often used in applications that require switching and amplifying electrical currents. The current rating of this FET device is 60A, which is sufficient for most applications.

FETs and MOSFETs

FETs, or Field-Effect Transistors, and MOSFETs, or Metal–Oxide–Semiconductor Field-Effect Transistors, are transistors that have an electrical charge-controlled gate, which forms a channel between source and drain regions. These transistors are typically used in digital or analog applications and can be used to switch or amplify electrical currents. FETs and MOSFETs are widely used in computers, digital systems, and analog or mixed-signal systems, due to their low cost and ease of use. FETs have three terminals: gate, source, and drain. The gate controls the flow of current between source and drain while MOSFETs have an additional terminal, the substrate, which is connected to the source.

Characteristics of BUK9Y8R7-60E,115

The BUK9Y8R7-60E,115 is a single N-channel MOSFET, which provides excellent electrical insulation between the gate and the source. The N-channel MOSFET has the highest current rating, with the lowest on-resistance (RDS(ON)). This makes it suitable for applications that require high power efficiency. This FET device has a standard operating temperature range of -55°C to 150°C, allowing it to be used in a wide range of applications, including automotive and industrial applications. Its high thermal conductivity ensures that it can handle large currents without surpassing its maximum operating temperature.

Application Field and Working Principle of BUK9Y8R7-60E,115

The BUK9Y8R7-60E,115 is ideal for applications that need efficient switching or amplifying of electrical currents. It can be used in digital and analog electrical circuits, as well as motor control systems. The FET device works on the principle of electrostatic control. When a voltage is applied to the gate, an electric field is formed around the insulated gate, which controls the current from source to drain. This action allows for efficient switching and amplifying of current, as the gate’s resistance is lower than the channel’s from source to drain. The BUK9Y8R7-60E,115 can be used in several different configurations, including voltage-mode and current-mode control, depending on the application requirements. Current-mode control allows for more precise and efficient control of current, while voltage-mode control is suitable for applications with high power requirements.

Conclusion

The BUK9Y8R7-60E,115 is an ideal FET device for applications that require efficient switching and amplifying of electrical currents. Its low RDS(ON) and high current rating make it suitable for digital and analog systems, as well as motor control applications. It is also capable of operating within a wide range of temperatures and configurations, making it a reliable and efficient choice for many applications.

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