BUL138FP Allicdata Electronics
Allicdata Part #:

BUL138FP-ND

Manufacturer Part#:

BUL138FP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 5A TO-220FP
More Detail: Bipolar (BJT) Transistor NPN 400V 5A 33W Through ...
DataSheet: BUL138FP datasheetBUL138FP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1A, 5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 33W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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The BUL138FP is a transistor designed for use as a high-power low-voltage switch. It is a single-pole, double-throw device, meaning it can be used to switch current between two different circuits. The BUL138FP is a PNP bipolar junction transistor (BJT), used most often in applications that require large amounts of electrical power. This type of transistor is commonly used in switching and amplifier circuits, as well as in motor control.

In terms of design, the BUL138FP is a four-layer polysilicon transistor device with two collector nodes and a single emitter node. It is constructed with a construction technique based on the CMOS process. The transistor is designed with a polysilicon layer and an oxide layer. This design ensures a good thermal resistance, a low capacitance, and a high operating speed.

The operating voltage range of the BUL138FP is typically 40 to 800 volts, with a nominal quiescent current of 50 milliamps and a rated minimum collector current of 1 amp. It is designed to support a maximum collector current of 200 amps, making it well suited for high-power switching applications. The BUL138FP features a rugged build quality for use in high-vibration environments, such as those encountered in automotive and industrial applications.

The BUL138FP offers a high switching speed, typically up to 4.5 nanoseconds per transition. This reduces operating time, resulting in improved efficiency. The device also features built-in protection that prevents it from consuming excessive amounts of power during operation. The thermal dissipation characteristics of the transistor make it well-suited for high-power applications, as it can dissipate up to 15 watts of power per device.

In terms of working principle, the BUL138FP is a device that is controlled by a current applied to the base terminal. When a current is applied to the base terminal, it creates an electric field that attracts electrons from the collector region to the emitter region. The number of electrons being pulled in is determined by the amount of current applied to the base terminal. This causes a decrease in the voltage at the collector and an increase in the voltage at the emitter. As such, the BUL138FP operates as a switch, allowing current to flow between two different circuits.

The BUL138FP is an ideal device for use in a variety of switching and amplifier circuits, as it offers high electrical power and a rugged build quality. The device has a wide operating voltage range and high power dissipation, making it suitable for use in many different applications. The fast switching speed and protection features also make it an ideal choice when building circuits of any complexity.

The specific data is subject to PDF, and the above content is for reference

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