BZT55B7V5-GS08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	7.5V
Tolerance:	±2%
Power - Max:	500mW
Impedance (Max) (Zzt):	7 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 5V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF

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Introduction to BZT55B7V5-GS08

BZT55B7V5-GS08 is a diode-type device, which belongs to the Zener Single family. It is mainly used in low-voltage applications, such as providing precise voltage regulation, reverse voltage protection and overvoltage protection.

Application Fields of BZT55B7V5-GS08 Zener Single

The most common application of BZT55B7V5-GS08 is low-voltage regulation. This device can be used for precise regulation and help stabilize the circuit. The Zener diode works similarly to a transistor, with a junction between a P-type and N-type semiconductor. It is an electrical circuit component, with anode and cathode terminals, and it works based on the Zener breakdown phenomenon. When the reverse voltage is greater than the Zener voltage of the diode, a breakdown phenomenon will occur, and current will start to flow from the anode to the cathode.The design of BZT55B7V5-GS08 includes an internal electrical adjustment of the formed junction, allowing precise voltageregulating performance. This self-regulation helps the circuit maintain target voltage values and improves its accuracy. Additionally, this Zener device can be used as a current control element, allowing switching and power control applications to be achieved. Moreover, BZT55B7V5-GS08 has good temperature stability that can enable great temperature collection and operation as compared to common transistors.Besides its function in providing accurate voltage regulating, BZT55B7V5-GS08 can also be used as reverse voltage protection and overvoltageprotection. Its built-in breakdown ability can protect the devices in a circuit from being damaged or destroyed from voltage spikes which could beless than the minimum voltage required for a breakdown of a normal diode.

Working Principle of BZT55B7V5-GS08 Zener Single

The behaviour of BZT55B7V5-GS08 is determined by two parameters: the Zener voltage and the breakdown voltage. The Zener voltage is the voltage at which the diode conducts a current from the anode to the cathode with an applied reverse voltage. This voltage typically ranges from 1.5 V to 200 V, while the breakdown voltage value varies between 6V and 10V. When forward biasing is applied to the PN junction of the Zener diode, it behaves like a normal silicon diode and requires voltage of approximately 0.2-0.7V to initiate conduction. On the other hand, when the reverse biasing is applied, the Zener breakdown phenomenon occurs. Due to this breakdown, the PN junction junction will create a low resistance channel, and the same current will flow regardless of voltage value. When a reverse voltage is applied to the diode, it will conduct when the high reverse voltage reaches its breakdown value. In summary, the working principle of BZT55B7V5-GS08 mainly depends on the Zener breakdown to enable low-voltage regulation, reverse voltage protection and overvoltage protection. The devices can be used for precision voltage regulation, reverse voltage protection and overvoltage protection. Its design is best for temperature stable, low-power operations. This allows the device to be used in applications that require stability and accuracy.

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