| Allicdata Part #: | BZX55C6V8A0G-ND |
| Manufacturer Part#: |
BZX55C6V8 A0G |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 6.8V 500MW DO35 |
| More Detail: | Zener Diode 6.8V 500mW ±5% Through Hole DO-35 |
| DataSheet: | BZX55C6V8 A0G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01802 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 6.8V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 8 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 3V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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A BZX55C6V8 A0G diode is a type of voltage-regulating diode, also known as a Zener diode. It is a semiconductor device designed to operate in the reverse-breakdown region. It is used for voltage regulation, voltage clamping and in some flyback circuits. Its temperature coefficient is usually higher than other transistors, making it suitable for applications that require more precise control.
The BZX55C6V8 A0G diode has a maximum junction temperature of 150°C and a max current of 600 mW. Its maximum breakdown voltage is 6.8 V, with a maximum reverse leakage current of 200 µA. It has a thermal resistance of 500 K/W. Its maximum reverse recovery time is 100 ns.
The BZX55C6V8 A0G diode is often used in circuits that require very precise control over the current, such as power supplies and audio amplifiers. It can be used to regulate voltage or clamp voltage spikes to protect other components in the circuit. It can also be used in some flyback circuits to absorb energy during the flyback period.
The BZX55C6V8 A0G diode can be used for applications that require high temperature control, such as in battery chargers and motor drives. In motor drives, the diode can be used to limit voltage and current transients, especially during starting and braking. It can also be used to eliminate reverse current issues.
The working principle of the BZX55C6V8 A0G diode is based on the phenomenon known as Zener breakdown. Zener breakdown occurs when the reverse-biased p-n junction of the diode reaches a critical voltage, creating an avalanche that causes a sharp drop in resistance.
The magnitude of the voltage at which the breakdown occurs is determined by the junction characteristics and is specific to the diode. At standard temperatures, this breakdown occurs at a constant voltage and is stable over a wide range of current, allowing the diode to be used as a voltage regulator.
Furthermore, the BZX55C6V8 A0G diode has a relatively high temperature coefficient, which allows for more precise control over voltage regulation and makes it particularly suitable for use in high temperature applications.
In summary, the BZX55C6V8 A0G diode is a type of voltage-regulating diode specifically designed for use in the reverse-breakdown region. It is often used in circuits that require very precise control over the current, such as power supplies and audio amplifiers, and can also be used in battery chargers and motor drives to limit voltage and current transients. Its working principle is based on Zener breakdown, which occurs when the reverse-biased p-n junction of the diode reaches a critical voltage.
The specific data is subject to PDF, and the above content is for reference
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| BZX585B33 RKG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 33V 200MW SOD... |
| BZX585B36 RKG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 36V 200MW SOD... |
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BZX55C6V8 A0G Datasheet/PDF