CGH40006S Discrete Semiconductor Products |
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Allicdata Part #: | CGH40006STR-ND |
Manufacturer Part#: |
CGH40006S |
Price: | $ 20.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 6QFN-EP |
More Detail: | RF Mosfet HEMT 28V 100mA 0Hz ~ 6GHz 12dB 8W 6-QFN-... |
DataSheet: | CGH40006S Datasheet/PDF |
Quantity: | 600 |
200 +: | $ 18.59140 |
Series: | GaN |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 0Hz ~ 6GHz |
Gain: | 12dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 8W |
Voltage - Rated: | 84V |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-QFN-EP (3x3) |
Base Part Number: | CGH40* |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CGH40006S is a type of metal oxide semiconductor field effect transistor (MOSFET). It is a silicon N-channel enhancement mode MOSFET with an RF rating across its drain and source electrodes. The device is used extensively in applications where switching and modulation of high-frequency signals are required in RF systems.
The CGH40006S is a very popular MOSFET due to its high frequency performance, high breakdown voltage, and low capacitance. Its small gate capacitance ensures fast switching speeds and low distortion, making it ideal for applications such as narrow band or wideband linear amplifiers, power amplifiers, and low noise amplifiers (LNA). It is also suitable for RF switches, mixers, filters and oscillators. The CGH40006S can operate at frequencies up to 2GHz with a maximum drain-source voltage (VDS) rating of 50 volts and a drain current (ID) of 1.5 amps. It also features a lower rDS(on) (drain-source resistance) of 15Ω at VGS of 4.5V, meaning that it requires less voltage to turn it on and off, saving power and improving efficiency.
The working principle of the CGH40006S is simple and based on how electric fields can influence the behaviour of electrons. When the gate voltage of the transistor is increased, the electric field between the gate and the source increases, pushing electrons from the source towards the drain. This causes a change in the resistance between the drain and the source, allowing the current to flow from drain to source or vice-versa. When the gate voltage is reduced, the electric field decreases, decreasing the resistance between the drain and source, thereby turning the transistor off.
This type of device is ideal for applications requiring high frequency tones and signals due to its low turn-on and turn-off times thanks to its low gate capacitance. Moreover, its low output capacitance ensures that signal distortions while switching are kept to a minimum. This makes it suitable for applications such as signal processing in high speed data communication systems. In addition, its high breakdown voltage rating makes it extremely suitable for use in harsh operating environments such as automotive, industrial and medical applications.
In summary, the CGH40006S is a type of MOSFET which is used extensively in applications requiring high frequency switching and modulation. Its small gate capacitance and low capacitance ensure fast switching speeds, low distortion and improved efficiency. Its high breakdown voltage rating makes it suitable for use in rugged operating environments making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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