CGHV14250F Allicdata Electronics
Allicdata Part #:

CGHV14250F-ND

Manufacturer Part#:

CGHV14250F

Price: $ 254.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 50V 440162
More Detail: RF Mosfet HEMT 50V 500mA 1.2GHz ~ 1.4GHz 18dB 330W...
DataSheet: CGHV14250F datasheetCGHV14250F Datasheet/PDF
Quantity: 86
1 +: $ 231.73300
Stock 86Can Ship Immediately
$ 254.91
Specifications
Series: GaN
Packaging: Tube 
Part Status: Active
Transistor Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 42mA
Noise Figure: --
Current - Test: 500mA
Power - Output: 330W
Voltage - Rated: 125V
Package / Case: 440162
Supplier Device Package: 440162
Description

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CGHV14250F is a type of high-performance power Field Effect Transistor (FET) designed for applications such as Class A and B power amplifier stages and wide band amplifiers, which require high power output with optimized linearity. It is an RF MOSFET, which is commonly used for radio-frequency (RF) applications in communications systems and power amplifiers. It is a FET specifically designed for low-noise operation, with low gate-drain, source-drain, and mutual capacitance. It offers outstanding benefits such as high power, low noise, and excellent linearity.

CGHV14250F is a vertical double-diffused metal-oxide-semiconductor FET. It consists of four terminals, a source (S), a gate (G), a drain (D), and a substrate (B). The source and gate are connected to the channel formed by two opposing N-type and P-type regions. The source and drain are connected to two oppositely-oriented N-type regions, while the gate is usually connected with a metal or P-type region. The substrate is not normally connected to anything, and its function is mainly to contain the reverse bias voltage and resulting surface field effect.

The working principle of CGHV14250F is based on the physical mechanism of the field effect . When the gate voltage of a FET is applied, an electric field is set up between the gate and drain, which creates a concentration inversion layer between the two electrodes. This causes the current flow between the source and the drain to increase, since the majority carriers can flow easily through the inversion layer, resulting in current flow. As the magnetic field rises, the current flow increases in the FET, allowing it to operate with very high efficiency.

The CGHV14250F is an excellent choice for a wide range of radio-frequency applications. It is capable of operating at high frequencies and power levels, while maintaining low input and output impedance levels. It is also temperature-stable and exhibits low gates-source capacitance. The CGHV14250F is a great choice for RF amplifiers, power amplifiers, and broadband amplifiers.

The CGHV14250F is a great choice for those who require high-power, low-noise, and linear operation from their FETs. It is capable of producing high power output with optimum linearity, making it ideal for Class A and B power amplifier stages, as well as for wide-band amplifiers. Its temperature-stable operation and low input and output impedance also make it an excellent choice for RF applications, such as communication systems and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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