CGHV60075D5-GP4 Allicdata Electronics
Allicdata Part #:

CGHV60075D5-GP4-ND

Manufacturer Part#:

CGHV60075D5-GP4

Price: $ 37.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 50V DIE
More Detail: RF Mosfet HEMT 50V 125mA 6GHz 17dB 75W Die
DataSheet: CGHV60075D5-GP4 datasheetCGHV60075D5-GP4 Datasheet/PDF
Quantity: 40
10 +: $ 33.74910
Stock 40Can Ship Immediately
$ 37.13
Specifications
Series: GaN
Packaging: Tray 
Part Status: Active
Transistor Type: HEMT
Frequency: 6GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 125mA
Power - Output: 75W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die
Description

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The CGHV60075D5-GP4 is a high-performance RF power transistor module specially designed for Radar, EMC and high-power pulse applications. It is a gallium nitride (GaN) HEMT power transistor that offers optimized gain, power, and efficiency characteristics at frequencies up to 6 GHz. The device operates in Class AB mode with collector current up to 600 A, collector voltages up to 75 V, and output power up to 600W. With its superior gain, it is a great choice for signal amplifier applications.

The CGHV60075D5-GP4 module is designed to be used in a variety of applications, such as signal generation and broadcast, satellite transmission, radar systems, and other electronic warfare applications. It is also suitable for use in Mobile Communication networks, such as LTE and 5G.

The CGHV60075D5-GP4 module is designed with a two-stage architecture and utilizes two transistors in the same package. This allows it to achieve high-power, high-efficiency operation while utilizing a minimized amount of space. The module has the ability to operate in Class AB mode, which allows it to maintain its high power output and efficiency over a wide range of drain-source voltages. The device is also designed with a high-speed input/output buffering circuit, making it compatible with a wide range of high-frequency power applications.

The working principle of the CGHV60075D5-GP4 module is based on the concept of remote cascade operation, which utilizes voltage and current feedback from the drain-source terminal to maintain a stable operating point. This is done by controlling the gate voltage of the second transistor according to the voltage and current on the drain-source terminal. The gate voltage of the second transistor is then used to adjust the drain-source current and voltage and so the device is able to maintain an ideal operating point and operate at peak efficiency. By maintaining an ideal operating point, the CGHV60075D5-GP4 module is able to achieve higher gain and power output with improved efficiency.

The CGHV60075D5-GP4 module is designed to be used in high-frequency power applications that require high power and high efficiency. It has the ability to operate at frequencies up to 6GHz, making it an ideal choice for signal amplification, broadcast, and other high-power applications. The device is also designed with a high-speed input/output buffering circuit and has the ability to maintain a stable operating point with voltage and current feedback. All of these features make the CGHV60075D5-GP4 module an ideal choice for a variety of RF power applications.

The specific data is subject to PDF, and the above content is for reference

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