Allicdata Part #: | CGHV60170D-GP4-ND |
Manufacturer Part#: |
CGHV60170D-GP4 |
Price: | $ 108.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 50V DIE |
More Detail: | RF Mosfet HEMT 50V 260mA 6GHz 17dB 170W Die |
DataSheet: | CGHV60170D-GP4 Datasheet/PDF |
Quantity: | 20 |
10 +: | $ 98.74690 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 6GHz |
Gain: | 17dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 260mA |
Power - Output: | 170W |
Voltage - Rated: | 150V |
Package / Case: | Die |
Supplier Device Package: | Die |
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The CGHV60170D-GP4 is a depletion-mode gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) intended for use in medium power and low noise applications. This high-speed device can be used in a wide variety of applications such as voltage-controlled amplifiers and power amplifiers for wireless applications such as cellular and cordless phones, wireless local area networks and microwave point-to-point radio links.
The CGHV60170D-GP4 is a high-performance GaAs MMIC featuring an ultra-low noise figure, medium power and very linear operation. The device is fabricated on a gallium arsenide substrate with a 0.6-micron gate-length and a gate width of 3.2 microns.
CGHV60170D-GP4 Application Field and Working Principle
The CGHV60170D-GP4 can be used in a variety of applications such as low noise, power and linearity applications in the frequency range of 400 MHz to 4 GHz. The device is a field-effect transistor (FET) with a metal-oxide-semiconductor (MOS) gate, enabling further reduction of noise figure.
Like other field-effect transistors, the gate of the CGHV60170D-GP4 is the control terminal and is used to regulate the current flow between the drain and the source. The gate receives electrical signals from the input circuit and when a certain voltage is exceeded a current is transferred from the source to the drain through the channel. The channel is the actual channel in which the electrons flow, while the gate is the voltage which is used to control the flow of these electrons.
A typical application of the CGHV60170D-GP4 is as a low-noise amplifier (LNA). LNAs are used in a wide variety of communication systems to amplify weak incoming signals. As an LNA, the device is typically biased by a negative voltage, with the output voltage appearing at the drain. The device acts as a reversible amplifier, amplifying positive and negative signals at the same time.
Another application of the CGHV60170D-GP4 is as a power amplifier (PA). PAs are often used to increase the power of a signal for transmission. A PA consists of multiple stages of amplification, with the last stage providing the highest degree of amplification. The device acts as a power-efficient amplifier, as it utilizes less current than bipolar transistors or operational amplifiers. This reduces power consumption, making the device an ideal choice for applications where power efficiency is critical.
Aside from being used as an amplifier, the CGHV60170D-GP4 can also be used as an oscillator. Oscillators are used to generate repeating waveforms which can then be used in various forms of digital and radio communication. The device can be used in digital radio communication systems such as FM radio, where it can provide reliable, accurate transmission of signals over long distances.
The CGHV60170D-GP4 is an ideal device for applications that require low noise, medium power and linear results. With its wide variety of applications and features, the device is a versatile choice for a variety of medium power, low noise and linear applications.
The specific data is subject to PDF, and the above content is for reference
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