CP210-2N4416-CT20 Allicdata Electronics
Allicdata Part #:

CP210-2N4416-CT20-ND

Manufacturer Part#:

CP210-2N4416-CT20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS JFET NCH 1=20PCS
More Detail: JFET N-Channel 30V Surface Mount Die
DataSheet: CP210-2N4416-CT20 datasheetCP210-2N4416-CT20 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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CP210-2N4416-CT20 is a type of field-effect transistor (FET), more specifically a junction field-effect transistor (JFET). It contains a source, drain and a gate electrode. The FET is a three terminal device with its primary function being to control electric current. It works as a voltage-controlled current source and its operation is based on the principle of varying current depending on the amount of voltage applied to its gate.

FETs are used in many different applications including signal processing, oscillators, power amplifiers, voltage regulators and signal modulation. The CP210-2N4416-CT20 is most often used in oscillator, power amplifier and voltage regulator applications. In oscillator applications, it is used to generate a stable frequency by providing a path for current to flow through the transistor. In power amplifier applications, the FET’s current-handling capability makes it ideal for amplifying large signals. Voltage regulator applications use the FET to maintain a constant output voltage. Signal modulation applications use the FET to control the amplitude of the signal.

The operation of a JFET can be explained by looking at the current flow between its source and drain terminals. Normally, the source is more positive than the drain terminal, creating an electric field across the semiconductor channel. This creates a strong barrier and no current can flow through. However, when a positive voltage is applied to the gate terminal, the electric field is weakened and the source current can flow. Similarly, a negative voltage applied to the gate will create an electric field which will increase the barrier and stop the current flow.

In terms of performance, the CP210-2N4416-CT20 offers good high frequency switching and low on-resistance. Its low on-resistance and high voltage allows it to handle high currents, which makes it ideal for power amplifier and voltage regulator applications. The CP210-2N4416-CT20 also offers low noise and distortion, which makes it great for use in signal processing and modulation applications.

The CP210-2N4416-CT20 is an excellent choice for a wide range of applications, thanks to its performance and design. Its source, drain and gate electrodes, together with its ability to handle high currents and low noise and distortion, make it a versatile, reliable and cost-effective choice for many applications. As such, it is a popular choice in the fields of signal processing, oscillators, power amplifiers, voltage regulators and signal modulation.

The specific data is subject to PDF, and the above content is for reference

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