CSD16412Q5A

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The CSD16412Q5A is a high-performance, high-speed, low-RDS (on) logic-level power MOSFET, fabricated using advanced technology.This power transistor is offered in a TO-220F (13-Lead) package and is used in a variety of general-purpose applications.

The CSD16412Q5A is designed for single-phase, fast switching applications in power management, audio amplifiers and high-current/high-voltage switch designs. This MOSFET is capable of delivering high voltage and high current in a very small form factor, maximising efficiency and improving reliability. It’s also capable of low-RDS (on) switching, reducing power losses and making it suitable for a range of power management applications.

The CSD16412Q5A is a modern power transistor which therefore offers low-energy consumption, low switching losses, and improved power efficiency. This device is suitable for a wide range of applications, such as power management, audio amplifiers, motor-control systems, and other applications that require high-current, high-voltage switching.

The application field where the CSD16412Q5A is used is extensive. It is suitable for both AC and DC operating voltage requirements and its high-temperature operation makes it the preferred choice for automotive applications. Additionally, it is a great fit for high-efficiency, high-speed switching applications, power management applications, audio amplifiers, and wireless networks.

The CSD16412Q5A has a low-threshold, low-gate-charge, and a high-drain-to-source breakdown voltage. This device has been designed for use in modern power amplifier systems which require a high reliability MOSFET with a very low switching loss. This power transistor also offers fast turn-on and turn-off times while maintaining very low power dissipation.

The working principle of the CSD16412Q5A is based on the operation of power field-effect transistors. It is capable of manipulating and controlling large electrical signals, offering high power conversion efficiency, high frequency switching, and low switching losses. The CSD16412Q5A is specifically designed to offer high-speed switching and low-power loss. Its low gate-charge and low on-resistance make it a versatile option for a wide range of applications.

The CSD16412Q5A is ideal for high-current, high-voltage switch designs. Its low gate charge and low on-resistance make it a viable choice for a variety of power management and audio applications. The CSD16412Q5A is specifically designed to provide fast turn-on and turn-off times while maintaining very low power dissipation. Additionally, it offers a low-threshold and high-drain-to-source breakdown voltage, making it an excellent choice for high-efficiency, high-speed switching applications.

The CSD16412Q5A is a highly efficient, low-RDS (on) logic-level power MOSFET and is an excellent choice for applications that require high-voltage and high-current switching. With a higher switching speed and low gate charge, this device offers improved system performance and reduced costs. And, being offered in a TO-220F (13-Lead) package, it offers more flexibility for different design options.

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