CSD16556Q5B

Series:	NexFET™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.07 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6180pF @ 15V
FET Feature:	--
Power Dissipation (Max):	3.2W (Ta), 191W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSONP (5x6)
Package / Case:	8-PowerTDFN

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The CSD16556Q5B field-effect transistor, also known as a FET, is a single-field (insulated) metal oxide semiconductor (MOSFET) that is used for a wide range of applications. It is designed to control relatively large currents and voltages in a variety of industrial and consumer electronics.The CSD16556Q5B is a robust, low-power electrical switch that can be used to control a wide range of electrical signals. It has a drain-source breakdown voltage of 400V and a maximum drain current of 30A. The on-resistance is low, which means that it has high efficiency. Additionally, it has a maximum avalanche energy rating of 30mJ and a lead-free solder temperature rating of 260°C.The CSD16556Q5B has been designed to be used in a variety of applications, such as the control of power in motor drives, industrial automation and robotics, audio, lighting, CCTV, automotive, and drones. It is also used in solar and high voltage DC applications, and is ideal for controlling signals in sensitive RF and microwave applications, such as cellular base stations and remote radio heads.The working principle of the CSD16558Q5B is based on the operation of a FET. It uses an insulated metal gate (IMG) to control the flow of charge carriers between the source and the drain. A voltage applied to the gate (source) allows for either an increase or decrease in current flow through the device. If a negative voltage is applied to the gate, the FET is in an off-state and no current is able to flow. If a positive voltage is applied to the gate, the FET is in an on-state and current flows between the source and the drain.The FET is an indispensable and indispensable device in the field of electronics. It is an essential part of many modern electronic devices and is used to control current flow by regulating the electrical charge between the source and the drain. The CSD16556Q5B is a robust, low-power FET that is ideal for controlling the current flow in a variety of applications. With its 400V breakdown voltage and low 1.5Ω on-resistance it is ideal for controlling relatively large currents and voltages, allowing for reliable operation in a wide range of applications.

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