CSD17310Q5A Allicdata Electronics
Allicdata Part #:

296-25858-2-ND

Manufacturer Part#:

CSD17310Q5A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 100A 8SON
More Detail: N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surfac...
DataSheet: CSD17310Q5A datasheetCSD17310Q5A Datasheet/PDF
Quantity: 20000
Stock 20000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 8V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
Vgs (Max): +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
FET Feature: --
Power Dissipation (Max): 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-VSONP (5x6)
Package / Case: 8-PowerTDFN
Description

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The CSD17310Q5A is a high-voltage, high-power, N-channel laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) specifically designed for mobile and industrial radio frequency (RF) applications. This device is well suited for both high power and broadband amplifier applications in FM, AM, and GSM cellular phone transmitter applications. With its wide dynamic range and high-efficiency operation, the CSD17310Q5A is a versatile solution for power amplification needs.

The CSD17310Q5A is built on a high-voltage, laterally diffused metal oxide semiconductor process technology and is rated for operation from 2.5 to 12V and up to 28 volts maximum. This device is capable of delivering 10 watts of power with a maximum gain of 14dB and an impedance match of 50 Ohms. The device is also built with an internal temperature compensation circuit to ensure consistent performance in varying thermal conditions. The CSD17310Q5A also features an integrated S-parameter optimized high frequency output match circuit which allows for efficient power transfer between the device and the antenna.

The working principle of the CSD17310Q5A is based on the MOSFET transistor, which is a type of transistor based on the principle of metal-oxide-semiconductor field-effect. This transistor works by applying a voltage to the gate of the device, which in turn creates an electric field that modulates the conductivity of the device’s channel, thus allowing for the regulation of current that passes through, allowing for the amplification of signals. The MOSFET transistor is a single-gate type, which means the voltage applied to the gate of the device is the only way to control the current that passes through it.

The CSD17310Q5A is ideal for mobile and industrial radio frequency applications due to its high voltage and power rating, wide dynamic range, and excellent efficiency. The CSD17310Q5A is also well suited for high power, broadband amplifier applications such as FM, AM, and GSM, as well as for digital RF power amplifier applications. This device is also well suited for designing high efficiency and high power gain amplifiers for various other RF application areas. Thanks to its integrated S-parameter optimized output match circuit and its reliable performance in varying thermal conditions, the CSD17310Q5A provides an exceptional solution for RF power and amplifier requirements.

The specific data is subject to PDF, and the above content is for reference

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