CSD17559Q5T

Vgs(th) (Max) @ Id:	1.7V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSON-CLIP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 96W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	1.15 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The CSD17559Q5T is a N-channel 30 V TrenchFET® Power MOSFET produced with advanced Infineon’s trench technology. It features excellent low on-resistance and fast switching times. This device is extremely well-suited for a variety of different applications, which include automotive and industrial motor drives, H-bridge circuits, switching power supplies, heater control, and general purpose power switching. The CSD17559Q5T is an N-channel enhancement mode Power MOSFET. It is constructed using a single-die of silicon with a unique and advanced trench technology, which significantly reduces the on-resistance of the device. This device is ideal for applications such as power management, motor control, and energy efficiency, as it provides very fast switching times with low power losses, making it incredibly efficient. This MOSFET is fabricated in an N-channel configuration with a 30V drain-to-source voltage (VDS) and a 50A drain current (ID) continuous rating. This device is capable of handling high power loads, allowing for higher switching frequencies and making it extremely tolerant of high voltage drops. It also offers very low gate-drain capacitance (Cgd) and exceptionally low turn-on resistances (Rdson). The CSD17559Q5T is primarily used for switching applications. When the gate is high, the MOSFET is on, allowing the drain to be connected to the source and allowing current to flow from the drain to the source. When the gate is low, the MOSFET is off, and the drain is disconnected from the source, preventing any current from flowing. This MOSFET is able to switch between on and off very quickly, making it ideal for applications such as motor control and switching power supplies. Furthermore, the CSD17559Q5T can be used in a variety of other applications. It is well-suited for use in industrial and automotive motor drives, H-bridge circuits, and heater control, as it is able to handle higher voltage drops and switching frequencies with ease. Additionally, it is an excellent choice for general purpose power switching, due to its low on-resistance and fast switching times. Overall, the CSD17559Q5T is an excellent choice for a wide range of applications. It is capable of handling high power loads with ease, and its low on-resistance and fast switching times makes it an efficient power device. Moreover, its low gate-drain capacitance and turn-on resistance make it an ideal choice for applications requiring high switching frequencies. It is hence a great option for automotive and industrial motor drives, H-bridge circuits, heater control, and general purpose power switching.

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