Allicdata Part #: | 296-39994-2-ND |
Manufacturer Part#: |
CSD17575Q3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 60A 8VSON |
More Detail: | N-Channel 30V 60A (Ta) 2.8W (Ta), 108W (Tc) Surfac... |
DataSheet: | CSD17575Q3 Datasheet/PDF |
Quantity: | 17500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4420pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 108W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD17575Q3 is a single N-channel power MOSFET transistor, produced by ON Semiconductor. It is widely used in various low, medium and high voltage applications due to its enhanced performance characteristics. It can be used for high speed switching in applications ranging from high-power amplifiers to motor control circuits. This article discusses the application fields and working principle of the CSD17575Q3.The CSD17575Q3 is categorized as a single N-channel power MOSFET transistor. This type of transistor has enhanced performance characteristics, such as higher current handling capacity, lower gate-source voltage (Vgs), and low on-state resistance. Its low on-state resistance helps reduce power losses and improve system efficiency.This transistor is suitable for use in multiple applications, including high-power amplifiers, motor control circuits and power converters. It can be used in a variety of circuit topologies, such as “H-bridge”, “T”, and “S”. It is also suitable for high-frequency switching applications due to its high switching speed.Working PrincipleThe CSD17575Q3 has a gate and source, connected to a metallic substrate. The gate is connected to the source and functions as an electrical switch. When an electric voltage is applied to the gate, electrons are drawn from the channel between gate and source. This movement of electrons reduces the resistance of the channel. The transistor is now in an “on” state and allows current to flow from source to drain. The output of the transistor is determined by the amount of current that is allowed to flow through the channel.The CSD17575Q3 is powered by a direct current (DC) voltage and is ideal for low voltage applications. Its on state resistance is low, meaning that it has a high current carrying capacity. The transistor is also capable of switching high current loads at high frequency.When the gate voltage of the transistor is taken to a lower voltage, the electron flow is reversed, thus turning the transistor “off”. This process is known as “turn-off”. The transistor can be disabled completely by removing the source-gate voltage completely.ConclusionThe CSD17575Q3 is a single N-channel power MOSFET transistor that is widely used in various low, medium and high voltage applications due to its enhanced performance characteristics. It can be used for high speed switching in applications ranging from high-power amplifiers to motor control circuits. The working principle of the CSD17575Q3 consists of applying a DC voltage to the gate in order to reduce the channel resistance and allow current to flow from source to drain. The transistor can be disabled completely by removing the source-gate voltage.
The specific data is subject to PDF, and the above content is for reference
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