Allicdata Part #: | 296-35629-2-ND |
Manufacturer Part#: |
CSD18502Q5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 40V 100A 8VSON |
More Detail: | N-Channel 40V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W ... |
DataSheet: | CSD18502Q5B Datasheet/PDF |
Quantity: | 7500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5070pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD18502Q5B is an advanced semiconductor device that is used in a wide range of applications. It is a part of the family of wideband enhancement-mode, vertical power field-effect transistors (FETs). This product is designed for high-power applications and is featured with extremely low on-resistance, high current carrying capacity, and fast switching speeds. It is commonly used for power switches, DC/DC converter switches, polarity reversal, inverters, and synchronous rectifiers.
The CSD18502Q5B is a single MOSFET that utilizes a FET (field-effect transistor) as the base element in its construction. The source of the FET, which is connected to the gate, allows the electrons to pass from the source to the drain. With proper biasing, the electrons can flow from the source to the drain and provide the switching action needed for the application. The drain of the FET is connected to the power supply, allowing the voltage and current to be present in the drain side of the device.
The CSD18502Q5B is composed of a single FET. It is supplied in a 4-pin surface mount package with a pin pitch of 0.65 mm. The gate has its own gate control circuit which uses a negative voltage to control the current flow. This makes the overall power circuit design simpler and more efficient as it helps to reduce the number of components needed. The FET also has a low on-resistance that can be used to achieve high-current carrying capability and fast switching speeds. The high current in the device can be used to drive a variety of loads.
The CSD18502Q5B is a versatile device that is used for a variety of applications. It can be used for power switches, DC/DC converter switches, polarity reversal, inverters, and synchronous rectifiers. The low on-resistance of the device can be used to achieve very low power losses in the switching circuit, which helps to reduce heat build-up and increase the overall efficiency of the device. The fast switching speeds of the device make it an ideal choice for high-frequency applications.
The CSD18502Q5B is a valuable device used in many different applications. Its low on-resistance, high current carrying capacity, and fast switching speeds make it an ideal choice for power switch designs. The gate control circuit helps to reduce the number of components and makes the overall power circuit design simpler and more efficient. The device is also versatile and can be used for a variety of applications, from power switches to DC/DC converter switches.
The specific data is subject to PDF, and the above content is for reference
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