Allicdata Part #: | 296-30571-2-ND |
Manufacturer Part#: |
CSD18503Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 40V 8SON |
More Detail: | N-Channel 40V 19A (Ta), 100A (Tc) 3.1W (Ta), 120W ... |
DataSheet: | CSD18503Q5A Datasheet/PDF |
Quantity: | 50000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2640pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD18503Q5A is a type of transistor, specifically a single, N-Channel, Silicon Carbide (SiC) MOSFET—an acronym for “metal–oxide–semiconductor field-effect transistor.” A MOSFET is controlled by a gate voltage and is used for switching applications. A SiC MOSFET is a type of MOSFET that includes materials made of SiC instead of traditional silicon. Compared to a silicon MOSFET, a SiC MOSFET has a higher switching speed, a lower gate charging loss, a lower internal capacitance, a lower gate resistance, and a higher temperature operating range.
Applications of the CSD18503Q5A vary depending on the use of the device. The device is usually used in industrial and consumer applications where the result is dependent on accurate, efficient and fast switching. Examples include motor control, switching power supplies, inverters, solar array management and lighting control. It’s also used in luxury and consumer electronics such as home audio and video, consumer appliances and air conditioning. As a SiC MOSFET, its characteristics make it suitable for high-temperature applications, as it can handle a wide range of conditions without losing its effectiveness.
The main principle behind an N-Channel MOSFET is that the flow of electrons (the current) is controlled by the amount of voltage applied to the gate terminal. The gate voltage is used to create an electric field. This electric field extends from the gate terminal down to the channel of the MOSFET. It sets up a potential barrier which allows current to flow or not, depending on the voltage applied to the gate terminal. When the voltage applied is high enough to overcome the potential barrier, electrons are allowed to pass through the channel and the transistor is considered “ON.” When the voltage is low, the electric field is not enough to overcome the barrier, and the transistor is considered “OFF.”
The CSD18503Q5A specifically is capable of working with high temperatures because of its SiC material used as the substrate. The SiC material allows it to operate in high-temperature environments while maintaining a low drain-source resistance at a maximum junction temperature of 175 degrees Celsius. Additionally, it features an integrated Schottky diode formed by the source connection, which helps protect the MOSFET from overvoltage.
The CSD18503Q5A is the perfect choice for a wide range of applications, especially in high-power, temperature-sensitive electronics. Its long list of capabilities and potential applications make it an excellent choice for designers looking for performance and power.
The specific data is subject to PDF, and the above content is for reference
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