CSD18504Q5A Discrete Semiconductor Products |
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Allicdata Part #: | 296-30572-2-ND |
Manufacturer Part#: |
CSD18504Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 40V 8SON |
More Detail: | N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 77W (T... |
DataSheet: | CSD18504Q5A Datasheet/PDF |
Quantity: | 97500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1656pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 77W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD18504Q5A has a host of applications across a variety of industries, as it is a single high voltage power field-effect transistor with a breakdown voltage rating between 200V and 600V. It is a silicon-based transistor, specifically an N-channel insulated gate transistor, with a peak drain current rating of 100A, a drain-source on-state voltage rating of 19V, and a drain-source on-resistance rating of 0.0042ohms. The on-resistance of the transistor is low, which makes it suitable for high-current, high-efficiency applications.
The CSD18504Q5A is typically used in power and audio amplifiers, high frequency applications such as switching power supplies and DC-DC converters, and various industrial application fields, like welding systems and motor controls. It can also be used to amplify low-level signals for use in communication and medical systems.
Although the CSD18504Q5A is an N-channel device, it can also be used in both enhancement-mode and depletion-mode operation depending on the design of the circuits in which it is used. It can switch on quickly with a low gate voltage, while providing a high degree of transient protection. It can also provide a considerable output current capability in a very small size.
The general working principle of the CSD18504Q5A can be summarized as follows. When a voltage is applied to the gate, a current flows between the drain and the source, thus creating a channel between the two. This current is called the drain current. The gate voltage affects the size of the conductive channel, which in turn determines the amount of current flowing through it. The pinch-off voltage is the gate voltage at which the current flow through the channel is cut off, effectively turning the transistor off.
In addition to its general operation, the CSD18504Q5A also provides some additional features. It has built-in ESD protection and a low gate charge for improved power efficiency. It also has a lowest on-switch voltage of 0.5V, which makes it ideal for low voltage applications. Finally, the package size is small, making it suitable for applications where space is tight.
Overall, the CSD18504Q5A is an extremely versatile power transistor, and is suitable for a wide range of applications. Its low on-resistance, fast switching speeds, and high current capability make it an excellent choice for high-power, high-efficiency designs, while its low gate voltage requirements and small size make it desirable for low voltage and space-constrained designs. It is an ideal solution for many different applications, and is sure to provide reliable operation for many years.
The specific data is subject to PDF, and the above content is for reference
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