CSD18504Q5A Allicdata Electronics

CSD18504Q5A Discrete Semiconductor Products

Allicdata Part #:

296-30572-2-ND

Manufacturer Part#:

CSD18504Q5A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 40V 8SON
More Detail: N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 77W (T...
DataSheet: CSD18504Q5A datasheetCSD18504Q5A Datasheet/PDF
Quantity: 97500
Stock 97500Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1656pF @ 20V
FET Feature: --
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-VSONP (5x6)
Package / Case: 8-PowerTDFN
Description

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The CSD18504Q5A has a host of applications across a variety of industries, as it is a single high voltage power field-effect transistor with a breakdown voltage rating between 200V and 600V. It is a silicon-based transistor, specifically an N-channel insulated gate transistor, with a peak drain current rating of 100A, a drain-source on-state voltage rating of 19V, and a drain-source on-resistance rating of 0.0042ohms. The on-resistance of the transistor is low, which makes it suitable for high-current, high-efficiency applications.

The CSD18504Q5A is typically used in power and audio amplifiers, high frequency applications such as switching power supplies and DC-DC converters, and various industrial application fields, like welding systems and motor controls. It can also be used to amplify low-level signals for use in communication and medical systems.

Although the CSD18504Q5A is an N-channel device, it can also be used in both enhancement-mode and depletion-mode operation depending on the design of the circuits in which it is used. It can switch on quickly with a low gate voltage, while providing a high degree of transient protection. It can also provide a considerable output current capability in a very small size.

The general working principle of the CSD18504Q5A can be summarized as follows. When a voltage is applied to the gate, a current flows between the drain and the source, thus creating a channel between the two. This current is called the drain current. The gate voltage affects the size of the conductive channel, which in turn determines the amount of current flowing through it. The pinch-off voltage is the gate voltage at which the current flow through the channel is cut off, effectively turning the transistor off.

In addition to its general operation, the CSD18504Q5A also provides some additional features. It has built-in ESD protection and a low gate charge for improved power efficiency. It also has a lowest on-switch voltage of 0.5V, which makes it ideal for low voltage applications. Finally, the package size is small, making it suitable for applications where space is tight.

Overall, the CSD18504Q5A is an extremely versatile power transistor, and is suitable for a wide range of applications. Its low on-resistance, fast switching speeds, and high current capability make it an excellent choice for high-power, high-efficiency designs, while its low gate voltage requirements and small size make it desirable for low voltage and space-constrained designs. It is an ideal solution for many different applications, and is sure to provide reliable operation for many years.

The specific data is subject to PDF, and the above content is for reference

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