Allicdata Part #: | 296-35027-2-ND |
Manufacturer Part#: |
CSD18533Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 60V 17A 8SON |
More Detail: | N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W ... |
DataSheet: | CSD18533Q5A Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2750pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 116W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD18533Q5A is a N-channel power MOSFET developed by Texas Instruments. This device offers superior switching performance and low channel-to-channel and on-resistance variation. It is designed for use in high side switch and protected configurations with modern switching topologies. This device can be used to control the current in many circuit applications, such as motor controllers, DC-DC converters and chargers.
The CSD18533Q5A has a maximum drain-to-source voltage of 12V, a maximum drain current of 6.4A, and an on-resistance of 2mΩ. It operates at a temperature range from -55°C to 150°C. This device also features excellent switching characteristics, with an optimized body diode recovery and low power consumption. Its RoHS compliant package is also beneficial for applications with stringent environmental requirements.
The CSD18533Q5A is a power MOSFET, meaning its operation is based on the principle of field-effect transistor (FET). In essence, FETs are three-terminal devices consisting of a source, drain, and gate. The voltage applied to the gate alters the conductivity of the channel between the source and drain terminals. When the gate voltage is positive with respect to the source (Vgs > 0V), the transistor is “ON.” This allows current to flow between the source and drain, and is known as sourcing current. When the gate voltage is negative (Vgs < 0V), the transistor is “OFF” and current is blocked. This is known as sinking current.
The CSD18533Q5A is an ideal choice for applications requiring low-current, high-power switching. It is particularly well suited for use in high-side switch and protected configurations. In high-side switch configurations, the device is used to control a load such as a DC motor or solenoid. It is also a good option for DC-DC converters and chargers. The CSD18533Q5A’s high µFETs and low on-resistance result in low power consumption, superior switching and low channel-to-channel variation. Its wide temperature range and RoHS compliant package make it an ideal choice for applications with stringent environmental requirements.
The specific data is subject to PDF, and the above content is for reference
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