CY62167G-45BVXIT

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The CY62167G-45BVXIT memory is a type of high-speed, low-power semiconductor static random-access memory (SRAM). It is manufactured by Cypress Semiconductor and is used in a variety of applications.

The CY62167G-45BVXIT is a 64KB x 8-bit SRAM that is organized as 8,192 words by 8 bits. It is fabricated using a 0.45 micrometer complementary metal-oxide-semiconductor (CMOS) process. The CY62167G-45BVXIT features low static power consumption and high operating speed, making it ideal for use in mobile and other compact electronic designs.

The CY62167G-45BVXIT is designed to provide performance, low power consumption, and low electromagnetic interference (EMI) under extreme temperatures. It has a wide operating temperature range of -40°C to 85°C and can withstand 5V input transients on the output pins. It is also rated for a 5V supply voltage for data retention and is rated for 400 mA transient currents on power/ground pins.

The CY62167G-45BVXIT\'s key features include its low power consumption, fast operation, and compatibility with multiple logic families. It has a maximum operating frequency of 20 MHz and a typical active current consumption of 95 mA. This current consumption is significantly lower than comparable SRAMs and makes the device ideal for battery-powered applications.

The CY62167G-45BVXIT is designed for a variety of applications, including automotive, industrial control, and consumer applications. It is mainly used in electronic devices that require high-speed, low-power data storage, such as digital cameras, gaming systems, and personal digital assistants (PDAs). It can also be used in data communication and networking, security systems, and imaging systems.

The CY62167G-45BVXIT utilizes a synchronous addressing and write data architecture. It has an asynchronous active-low chip enable (CE#) input pin and a read/write select (WE#) input pin. A minimum high voltage of 2.4V is required for each of the input pins to ensure proper operation. The output pins are active low and can be used in an open-drain configuration.

When writing data to the CY62167G-45BVXIT, the CE# pin and the WE# pin must both be low. Data is then placed on the address and data bus pins and the write enable signal is activated. The data is then written to the memory array when the write enable signal is deactivated. Data is read from the memory array by placing data on the address bus pins and activating the CE# pin. Data is then latched on the rising edge of the WE# signal and is output on the data bus pins.

In summary, the CY62167G-45BVXIT memory is a fast, low-power SRAM device that is suitable for a variety of applications, including automotive, industrial control, consumer, and data communication and networking. It is designed for ease of use and provides a high-speed, low-power data storage option for a variety of applications.

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