CY62256VLL-70SNXC Allicdata Electronics
Allicdata Part #:

428-1784-ND

Manufacturer Part#:

CY62256VLL-70SNXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 256K PARALLEL 28SOIC
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: CY62256VLL-70SNXC datasheetCY62256VLL-70SNXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: MoBL®
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC
Base Part Number: CY62256
Description

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The CY62256VLL-70SNXC is a high-speed, low-power static random access memory (SRAM). It is a type of nonvolatile memory, meaning that it can retain its memory even without power. As its name suggests, it is basically a random access memory device which can be operated at low power. It has a wide range of applications including industrial, automotive, consumer electronics, medical devices, and many more.

The CY62256VLL-70SNXC can operate at speeds up to 70 MHz, which is much faster than other SRAMs. It offers a variety of features such as write protection, adjustable current limits, and detailed fault detection. It also has an endurance of up to 10,000 write cycles and data retention of up to 20 years.

The CY62256VLL-70SNXC is a dual-port memory, meaning that it can be accessed simultaneously. This makes it suitable for applications where data needs to be shared between two devices. It also allows for multiple simultaneous read and write operations, making it a very efficient memory device.

The working principle of the CY62256VLL-70SNXC is simple. It acts like a normal SRAM, storing a bit of information in each cell. These bits are held in place by an electric field, which allows the data to be retrieved without any need for power. The electric field is generated by a charge on a capacitor, which is then released when a logic signal is sent to the memory.

When a logic signal is sent to the memory, the electric field on the capacitor is released, which allows the data stored in the cell to be read or written. This process is the same for reading and writing data, although the voltage needed to store or read the data varies depending on the particular memory device.

The CY62256VLL-70SNXC is designed for a wide range of applications, from industrial control systems to consumer electronics. The fast speed and low power consumption makes it ideal for handheld devices and automotive applications. The wide range of features makes it an excellent choice for many applications, from data storage to data protection.

The CY62256VLL-70SNXC is a versatile, low-power static random access memory that is suitable for a wide variety of applications. It has a fast speed and low power consumption, making it ideal for a variety of applications. Its dual-port memory makes it suitable for sharing data between devices. And its multiple read and write operations make it an efficient memory device.

The specific data is subject to PDF, and the above content is for reference

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