| Allicdata Part #: | 428-1784-ND |
| Manufacturer Part#: |
CY62256VLL-70SNXC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 256K PARALLEL 28SOIC |
| More Detail: | SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para... |
| DataSheet: | CY62256VLL-70SNXC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | MoBL® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 256Kb (32K x 8) |
| Write Cycle Time - Word, Page: | 70ns |
| Access Time: | 70ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package: | 28-SOIC |
| Base Part Number: | CY62256 |
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The CY62256VLL-70SNXC is a high-speed, low-power static random access memory (SRAM). It is a type of nonvolatile memory, meaning that it can retain its memory even without power. As its name suggests, it is basically a random access memory device which can be operated at low power. It has a wide range of applications including industrial, automotive, consumer electronics, medical devices, and many more.
The CY62256VLL-70SNXC can operate at speeds up to 70 MHz, which is much faster than other SRAMs. It offers a variety of features such as write protection, adjustable current limits, and detailed fault detection. It also has an endurance of up to 10,000 write cycles and data retention of up to 20 years.
The CY62256VLL-70SNXC is a dual-port memory, meaning that it can be accessed simultaneously. This makes it suitable for applications where data needs to be shared between two devices. It also allows for multiple simultaneous read and write operations, making it a very efficient memory device.
The working principle of the CY62256VLL-70SNXC is simple. It acts like a normal SRAM, storing a bit of information in each cell. These bits are held in place by an electric field, which allows the data to be retrieved without any need for power. The electric field is generated by a charge on a capacitor, which is then released when a logic signal is sent to the memory.
When a logic signal is sent to the memory, the electric field on the capacitor is released, which allows the data stored in the cell to be read or written. This process is the same for reading and writing data, although the voltage needed to store or read the data varies depending on the particular memory device.
The CY62256VLL-70SNXC is designed for a wide range of applications, from industrial control systems to consumer electronics. The fast speed and low power consumption makes it ideal for handheld devices and automotive applications. The wide range of features makes it an excellent choice for many applications, from data storage to data protection.
The CY62256VLL-70SNXC is a versatile, low-power static random access memory that is suitable for a wide variety of applications. It has a fast speed and low power consumption, making it ideal for a variety of applications. Its dual-port memory makes it suitable for sharing data between devices. And its multiple read and write operations make it an efficient memory device.
The specific data is subject to PDF, and the above content is for reference
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CY62256VLL-70SNXC Datasheet/PDF