CY7C027-15AXI Allicdata Electronics
Allicdata Part #:

CY7C027-15AXI-ND

Manufacturer Part#:

CY7C027-15AXI

Price: $ 3.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (32...
DataSheet: CY7C027-15AXI datasheetCY7C027-15AXI Datasheet/PDF
Quantity: 1000
1 +: $ 3.65000
10 +: $ 3.59000
100 +: $ 3.47000
1000 +: $ 3.23000
10000 +: $ 2.75000
Stock 1000Can Ship Immediately
$ 3.65
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: CY7C027
Description

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Memory

CY7C027-15AXI is a non-volatile memory device manufactured by Cypress Semiconductor Corporation. This type of memory is a type of semiconductor non-volatile memory that uses charge-trapping technology to store data. The CY7C027-15AXI uses a flashing technique to write and erase data, thus making it a popular choice for applications requiring high-speed memory access.

The CY7C027-15AXI is mainly used in consumer electronics, such as digital cameras and portable music players. It is also used in various automotive, industrial and medical applications. The main benefits of using this type of memory device are its high speed, low power consumption, abundant storage capacity and its ability to retain data even when power is removed.

Working Principle of CY7C027-15AXI

The CY7C027-15AXI works by trapping charge on two separate layers of a floating gate transistor. This trapped charge is used to produce either a logic 1 or a logic 0 state in the memory. The logic state 1 is derived from the floating gate, which contains the trapped charge, and the logic state 0 is derived from the control gate, which contains the counter-charge. The trapped charge can be written to or erased from the memory cells using a special programming voltage.

The CY7C027-15AXI is a very reliable memory device and is highly resistant to different types of interference. The non-volatile memory device is available as both a discrete device and as a package. The package includes the controller and the memory array. The controller provides the main control logic for the device and it controls the write and erase operations.

Conclusion

The CY7C027-15AXI is an excellent choice for a wide range of applications that require high-speed memory access, low power consumption and a large storage capacity. The device uses charge-trapping technology to store data and has a reliable structure that can withstand different types of interference.

The specific data is subject to PDF, and the above content is for reference

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