CY7C1311CV18-200BZC

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The CY7C1311CV18-200BZC is a multi-port, non-volatile, synchronous SRAM memory device that is used in a wide variety applications. This high-capacity SRAM device consists of a single chip, 2x18-bit wide, dual-port SRAM core and support logic. The device can hold up to 200 megabytes of data, with an access time of 6.4 ns for single read or write operations and 512 KB for a single read or write.

The CY7C1311CV18-200BZC works on a simple principle. It is essentially a synchronous SRAM device that is connected to an external bus, a control logic circuit and an external clock generator. Data can be read from or written to the device by either of the two ports, with data transactions occurring in the following order: address command, write data, read data, and write data. Data can only be read from or written to the device at the specified clock rate.

The primary application field for this device includes system-level storage, on-board program storage, data intensive operations and distributed digital control systems. It provides programmability, flexibility and scalability to digital systems and offers a high-performance actual storage solution. It also provides a high read/write speed and low-power performance with up to 512 KB of spare RAM.

The CY7C1311CV18-200BZC supports multiple clock speeds and multiple data widths. Multiple external clock sources can be connected to the device, regardless of the operating frequency. The device supports data widths up to 384 bits and can now be used in 8-bit, 16-bit, 24-bit and 32-bit mode. It also features a built-in CRC and a built-in error correction code, ensuring data integrity and reliability.

Integrated error-detection and correction mechanisms provide automatic and transparent data checking. This is done by comparison of a number of clock cycles after the data is written to the memory. It also supports write-through, write-back, write-once and read-only applications. All of these features ensure efficient data storage and enhanced performance.

In addition, the CY7C1311CV18-200BZC includes an on-chip counter that allows the device to be used as a direct memory access (DMA) controller. The on-chip counter allows direct memory access to the SRAM device and eliminates the need for additional address decoding hardware. The device also supports 32 pins of interrupt handling, allowing system interrupts to be easily handled.

The CY7C1311CV18-200BZC is an ideal solution for system-level storage applications and is notably easy to integrate into any system. It offers high performance, flexibility, scalability, low-power performance and low-cost data storage. The device can be used to hold up to 200 megabytes of data, providing a powerful and efficient storage solution for many applications.

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