CY7C1312BV18-200BZI

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The CY7C1312BV18-200BZI belongs to the family of CMOS SRAMs and is widely used in diverse applications. It is designed to offer a fast, low-voltage SRAM memory solution that is both reliable and affordable. The CY7C1312BV18-200BZI utilizes a patented 0.18 μm CMOS technology with 2-volt core and I/O voltages and a power-saving Active Standby Mode, offering the best performance at a low power consumption level.

The CY7C1312BV18-200BZI is a high-speed, low-power SRAM that operates with a 2.0 V supply voltage and provides a guaranteed read/write access time of 14/19 ns for 256 Kbits x 16 bits configuration. It also features a standby mode which further reduces the power consumption. The CY7C1312BV18-200BZI is designed to provide an interface buffer, which improves data stability and supports increased clock frequencies, while reducing the loading effects on the system bus.

The CY7C1312BV18-200BZI is a high-speed, low-power synchronous SRAM. It utilizes a unique asynchronous address-and-data READ/WRITE burst design, which allows for higher interface speeds and reduced power consumption. This SRAM can be clocked at over 200 MHz, allowing for high performance applications. For example, the chip could be used in real-time systems, graphics accelerators, audio and video data processing, and high-speed memory access.

The CY7C1312BV18-200BZI is a perfect choice for memory applications because it has both the speed and the power consumption required to achieve the best performance in the shortest period of time. The chip uses a 0.18µm CMOS manufacturing process, which makes it one of the most power efficient SRAM products in the market. It also supports an extended operating temperature range of up to 125°C, making it suitable for automotive, industrial and portable applications.

The CY7C1312BV18-200BZI works by using the unidirectional data flow from the SRAM memory controller to the SRAM transceiver. The SRAM transceiver interfaces the CY7C1312BV18-200BZI SRAM, forwarding the data to the SRAM address decoder for the decoding process. After the decoding, the SRAM output is generated and the data from the memory is loaded into the user-specified memory address. Then the CY7C1312BV18-200BZI SRAM is released to the user-specified memory address, accessed, and stored in the user-specified memory address. The SRAM also offers a power-saving active standby mode.

In conclusion, the CY7C1312BV18-200BZI is one of the most popular choices for memory applications because of its high speed, low power consumption and great performance. With its extended temperature range, it can be used in a variety of applications, from automotive to industrial and portable applications. This SRAM can handle burst data transfers, making it an ideal choice for high-performance applications. It is also highly reliable, making it an ideal choice for a long-term memory solution.

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