CZRT5237B-G Allicdata Electronics
Allicdata Part #:

CZRT5237B-G-ND

Manufacturer Part#:

CZRT5237B-G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 8.2V 300MW SOT23
More Detail: Zener Diode 8.2V 300mW ±5% Surface Mount SOT-23-3
DataSheet: CZRT5237B-G datasheetCZRT5237B-G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03149
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CZRT5237B-G is a diode in a SOD-123 package. It belongs to the Zener category, which is dedicated to use in voltage regulation, voltage clamping, peak voltage absorption and waveform processing applications. Its epitaxial construction allows a low effective capacitance and a fast switching behavior. The device also features a wide operating temperature range –40°C to +150°C.

The CZRT5237B-G’s application field is broad, this little but powerful device is widely used in computers, communications and consumer electronics, especially in those circuits where the steady state power dissipation exceeds 10 Wilcox. Here, the device offers robust performance, good stability and current temperature coefficient thanks to its SMD form factor. This makes it perfect for applications where it is essential to regulate output voltage levels, such as in AC/DC and DC/DC converters.

When it comes to its working principle, the CZRT5237B-G functions as a normal Zener diode, relying on the so-called Zener breakdown. This process occurs in heavily doped semiconductors where, when a reverse-bias voltage is applied, the semiconductor breaks down and allows the current to flow. In conventional diodes, a large voltage is needed to cause breakdown, but in the CZRT5237B-G this voltage is much lower due to its heavily doped construction. This breakthrough makes it particularly suitable for the application field mentioned above.

So the CZRT5237B-G is a neatly packaged discrete semiconductor device that offers an optimum performanc

The specific data is subject to PDF, and the above content is for reference

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