CZRT55C3V6-G

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Diodes are electronic components utilized in a variety of circuit applications, such as rectification, voltage regulation, and signal generation. Zener diodes, in particular, are designed for power regulation and protection. The CZRT55C3V6-G is one such device, a single zener diode designed for high reverse break-down voltage and high power capacity. This diode is encapsulated in a flame-retardant epoxy resin, and is ideal for applications such as voltage clamping, voltage energy absorption, bridge rectification, and voltage waveform shaping.

Application Field

The CZRT55C3V6-G is a single diode fabricated in a can type package. Its rectifier design diodes make it ideal for use in bridge rectifier designs, among other uses. The device itself is rated for a maximum power of 750 mW and a 3.6 volt Zener voltage, making it an ideal choice for use in any system where power regulation is required, such as power supplies, uninterruptable power supplies, voltage regulation, and overvoltage protection.

The device also offers a wide range of temperature ranges, from -55℃ to +125℃, making it suitable in industrial applications where environments vary greatly. The CZRT55C3V6-G also has a low capacitance, making it ideal for use in high frequency circuits. The low capacitance ensures minimum interference and a fast response time, further making it suitable for applications such as radio-frequency chokes and oscillators. Finally, the operating temperature range of -55℃ to +150℃ allows it to be used in a variety of harsh environments.

Working Principle

A Zener diode is a device that utilizes a reversed-biased p-n junction to allow current to flow in one direction, and also to provide voltage regulation. When the applied voltage exceeds the diode\'s built-in reverse breakdown voltage, known as its Zener breakdown voltage, the device will conduct current in the reverse direction. This will attract electron-hole pairs into the junction, resulting in a avalanche effect, causing the breakdown of the junction. The current then flows in the reverse direction, significantly increasing the voltage across the diode.

The CZRT55C3V6-G is designed specifically for use in high-power applications, such as rectifiers, voltage regulators and over-voltage protection devices. Its single diode design allows it to be connected in parallel with other devices in order to increase the voltage carrying capability of the assembly. Its low capacitance ensures that it has the ability to handle high frequencies with minimal interference, making it perfect for industrial applications where high frequencies are in operation.

The device is also designed for long-term reliability, with its flame-retardant epoxy enclosure ensuring that no damage due to arc oxidation can occur. It also has a built-in protection diode, which helps to protect the device from voltage surges and other forms of over-voltage damage. Finally, the device is designed to withstand temperatures of up to +150℃, making it suitable for use in temperatures that vary dramatically.

Conclusion

The CZRT55C3V6-G is a single diode, encapsulated in a flame-retardant epoxy enclosure, designed for high reverse breakdown voltages, high power capacities, and high frequency application. It is ideal for use in applications such as bridge rectification, voltage regulation, voltage waveform shaping, voltage clamping, and voltage energy absorption. Its low capacitance ensures minimal interference and a fast response time, and its temperature range ranges from -55℃ to +150℃, making it suitable in industrial applications where environments vary greatly.

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