DDTC115GKA-7-F Allicdata Electronics
Allicdata Part #:

DDTC115GKA-7-F-ND

Manufacturer Part#:

DDTC115GKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC115GKA-7-F datasheetDDTC115GKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3
Base Part Number: DDTC115
Description

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The DDTC115GKA-7-F is a single pre-biased bipolar junction transistor (BJT) able to handle up to 100V and 0.15A. It is a general-purpose device and is suitable for use in low-frequency switching and amplifier circuits, such as in automotive, industrial and consumer applications. This transistor can be used to efficiently drive loads such as motors and other inductive loads. The device also has a low saturated base drive voltage, making it suitable for use in low power circuits.The DDTC115GKA-7-F is a NPN silicon transistor with a current gain of 50. It has a collector emitter voltage of 100V and a current rating of 0.15A. The device also has a very low on-state saturation voltage, so it can be used in applications where low power usage is essential. The device also has an operating temperature range of -55°C to +150°C.The device is available in a single plastic package with a through-hole mount. It is also available in two surface-mount configurations, SMD and WPC. The DDTC115GKA-7-F is available in lead-free and Pb-free versions, to meet environmental standards for RoHS. The DDTC115GKA-7-F is a current-operated device. It works by controlling the current that passes through the collector-emitter connection, in response to the voltage at the base. When a reverse bias is applied to the base, current is blocked and the transistor is in a “cut off” state. When a forward bias is applied to the base, current will flow through the collector-emitter connection and the transistor will be in a “saturated” state. The base drive voltage and current required to drive the device depends on the load circuit. The DDTC115GKA-7-F is a versatile device which is widely used in circuits where a low power switch is required. It is particularly suitable for applications where low saturation voltage is important, such as driving LED indicators or relays. The device also has a very low input capacitance, meaning it can be used in high-speed switching circuits. The DDTC115GKA-7-F is an economical, general-purpose transistor which is widely available in a variety of packages. It is suitable for use in a range of applications, and its low saturation voltage makes it an ideal choice for low power circuits. The device is easily mounted and can be used in either through-hole or surface-mount configurations.The DDTC115GKA-7-F is a reliable, versatile and economical device which makes it an ideal choice for many applications. It has a wide operating temperature range and a low input capacitance, making it suitable for use in high-speed switching circuits. It is widely available, in both lead and lead-free versions, and is suitable for use in a variety of automotive, industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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