DDTD122LC-7 Allicdata Electronics

DDTD122LC-7 Discrete Semiconductor Products

Allicdata Part #:

DDTD122LCDITR-ND

Manufacturer Part#:

DDTD122LC-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTD122LC-7 datasheetDDTD122LC-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Base Part Number: DTD122
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The DDTD122LC-7, which belongs to a family of transistors known as Bipolar Junctions Transistors (BJTs), is a single, pre-biased device. It is designed to be used in applications that require it to carry a heavy load and to bear high electrical or mechanical stress. This type of transistor is commonly used in automotive, industrial, and military applications, as well as in medical equipment and instrumentation. The DDTD122LC-7 is capable of delivering high current, low dissipation, and excellent switching performance.

A transistor is an electrically controlled device that acts as an amplifier, an on-off switch, or a combination of both. It consists of 3 terminals (collector, base, and emitter) that control current flow between them. The operation of a transistor relies on a phenomenon known as the PN junction. A PN junction is formed by connecting two types of semiconductor material together, forming a depletion region where semiconductor carriers (electrons/holes) cannot flow.

The DDTD122LC-7 is a pre-biased transistor, meaning that a predetermined bias voltage is applied to the base terminal after fabrication. This bias voltage is used to control the current flow thru the transistor and is adjusted with a voltage divider. This bias voltage ensures that the base-emitter junction is forward biased and that the transistor operates in the active region.

When a small current applied to the base terminal of the DDTD122LC-7, a large current (amplified by the transistor) will be created at the collector terminal. This amplified current can be used to control a variety of devices including motors, relays, lamps, and other devices. This type of transistor also finds applications in telecommunications, power supplies, and other industrial applications.

The DDTD122LC-7 is capable of carrying currents in excess of 40 amps, making it suitable for high power applications. It is designed to operate with a maximum collector-emitter voltage of 400 volts, ensuring that it can handle high voltage environments. The wide range of operating currents and voltages makes the DDTD122LC-7 an excellent choice for a variety of industrial, automotive, and military applications.

The DDTD122LC-7 is a robust and reliable transistor that can be used in a wide range of applications. It is designed to deliver peak current ratings of up to 40 amps, making it ideal for applications where high current is needed. Moreover, its pre-biased operation makes it suitable for use in a variety of complex circuits. Its wide operational range and rugged construction make it an excellent choice for a range of industrial, military, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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