DMN3024SFG-13 Allicdata Electronics
Allicdata Part #:

DMN3024SFG-13DI-ND

Manufacturer Part#:

DMN3024SFG-13

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
More Detail: N-Channel 30V 7.5A (Ta) 900mW (Ta) Surface Mount P...
DataSheet: DMN3024SFG-13 datasheetDMN3024SFG-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.18000
10 +: $ 0.17460
100 +: $ 0.17100
1000 +: $ 0.16740
10000 +: $ 0.16200
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 479pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The DMN3024SFG-13 is a Silicon N-Channel MOS Field Effect Transistor (MOSFET). It belongs to a family of gate-controlled field effect transistors that are used in a variety of switching and amplifying applications. In particular, this type of device is known for its high speed switching capabilities and low on voltage, making it suitable for many applications. In this article, we will discuss the application field and working principle of the DMN3024SFG-13.

Application Field

The DMN3024SFG-13 is a general-purpose MOSFET suitable for a wide range of switching and amplifying applications. It is mainly used in low-power switching applications due to its low voltage drop and high switching speeds. Most common applications for this type of device include motor control, alarm systems, and relay control. It is also well suited for low noise switching circuits and high-current power supply applications. This device also features a very low drain-source capacitance, making it ideal for high-frequency switching applications.

This device can be used in both AC and DC circuits, making it versatile in its application field. It is most commonly used in high power digital circuits and power supply designs. This type of device is also used in digital audio control systems, automotive electronics, and other applications where superior performance is required.

Working Principle

The DMN3024SFG-13 uses a simple construction based on the principle of a field-effect transistor (FET). The device consists of a drain and source terminal, coupled with a gate terminal. The terminals are used to connect the device to the load, power supply, and control signal.

The operation of the device is based on the principle of a gate controlled field effect. This principle is used to control the current flow from the drain to the source terminal. When a positive voltage is applied to the gate terminal, the electrons in the drain region are attracted towards it, thus allowing a current to flow between the drain and the source. As the voltage applied to the gate terminal increases, the current in the channel between the drain and the source also increases. When the voltage on the gate goes to zero, the current in the channel goes to zero, thus turning the device off.

The DMN3024SFG-13 can also be operated in a linear mode, which is useful for applications such as signal amplification. The linear mode works by controlling the amount of current in the channel, determined by the voltage applied to the gate terminal. This allows the device to be used as an amplifier, where an input voltage can be used to control the output current.

Conclusion

The DMN3024SFG-13 is a Silicon N-Channel MOS Field Effect Transistor (MOSFET) that can be used in a wide range of switching and amplifying applications. It is most commonly used in low-power switching applications due to its low voltage drop and high switching speeds. The device uses the principle of a gate controlled field effect, where the current flow from the drain to the source is controlled by the voltage applied to the gate terminal. This makes it highly versatile, as it can be used in both AC and DC circuits, as well as linear and non-linear modes.

The specific data is subject to PDF, and the above content is for reference

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