DMN63D8LDW-7 Discrete Semiconductor Products

The DMN63D8LDW-7 is a FET transistor array device specifically designed for applications where high channel density and low on-resistance is needed. It consists of eight independently-controlled N-channel enhancement-mode power MOSFETs in the same package. Its source must be connected to the source of the load, while its drain is connected to the drain of the load, making it suitable for use in applications ranging from low-current analog switching to H-bridge circuits, motor control, and power switching.

Device Features

The DMN63D8LDW-7 has a low on-resistance of 111 mOhms at 25°C, making it an ideal choice for high-current applications. It also has an input gate-source voltage range of -4.5 volts to +12 volts, which allows for a wide variety of input signals. In addition, it has an open drain output, making it suitable for current-sinking applications. It also has a maximum package power dissipation of 1.5 watts, and is rated for operation up to 100V. Finally, it is housed in a small 7-pin SOT-89 package, which makes it ideal for applications where space efficiency is important.

Application Fields

The DMN63D8LDW-7 is ideally suited for motor control, H-bridge circuits, and power switching applications, where a low resistance and high current capability is required. Additionally, this FET transistor array device can be used in low-current analog switching applications. These may include signal routing and level-shifting, digital logic circuits, and logic buffer circuits.

Working Principle

The DMN63D8LDW-7 works by using the input signal to control the gate voltage of the power MOSFET. When the gate is held at a higher voltage than the source, the MOSFET is switched on, allowing current to flow from the drain to the source. By controlling the input signal, the device can be used to modulate the flow of current through the drain and source, thus enabling it to be used for applications such as motor control, H-bridge circuits, and power switching.

Conclusion

The DMN63D8LDW-7 is a FET transistor array device specifically designed for applications where high channel density and low on-resistance is needed. It has a low on-resistance of 111 mOhms, a wide input gate-source voltage range, and a maximum package power dissipation of 1.5 watts. It is suitable for applications ranging from motor control, H-bridge circuits, low-current analog switching, and power switching applications. The device works by using the input signal to control the gate voltage of the power MOSFET, and thus modulating the flow of current through the drain and source.