DMP1005UFDF-13

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The DMP1005UFDF-13 is a 100 V, ultra low-voltage, N−channel D−MOSFET optimized for portable devices that require low power operation but still require high speed switching. It can be used in a variety of applications, including portable power supplies, electronic ballasts, computer peripherals, and communications equipment.

This MOSFET features a low on−resistance of 9 Ω at 4.5 V, high switching speeds, and low gate charge. Its ultra low drain source voltage of 100 V makes it suitable for low voltage applications. Its low capacitance, due to its optimized chip design and gate oxide structure, also make it more power efficient.

The basic structure of the DMP1005UFDF-13 is a N-type MOSFET, which consists of a source, gate and drain. When no voltage is applied to the gate, the resistance between the source and drain will be high, and therefore, there will be no conduction. When a voltage is applied, electrons will be attracted from the source to the gate and they will form a conducting channel between the source and drain, thus allowing current to flow.

When the DMP1005UFDF-13 is used in a system, it is important to consider the application requirements and parameters and choose the right MOSFET for the job. This is because the performance of any transistor is dependent on the application parameters and the environment.

A typical application of the DMP1005UFDF-13 involves switching low-to-medium current levels. It can also be used to switch smaller loads, such as LED backlighting and low voltage (3.3 V) logic control signals. It is also suitable for high frequency operations, due to its high switching speed. Additionally, it can be used for switching power supply outputs and other high frequency loads.

In a system, the DMP1005UFDF-13 can be operated in various modes such as enhancement mode, normal mode, depletion mode and saturation mode. The operation of the device in each mode will be determined by the gate voltage and the drain-source voltage.

In the enhancement mode, the device remains stable at the threshold voltage and the channel conductance increases with the gate voltage, leading to a gain in the drain current. In the normal mode, the channel conductance remains constant, leading to a constant drain current. In the depletion mode, the device is off, and in the saturation mode, the drain current is limited only by the gate-source voltage and the drain-source voltage.

The DMP1005UFDF-13 is designed to provide efficient and reliable operation in portable devices. Its N-Channel design combined with its ultra low-voltage and high switching speed makes it ideal for portable applications requiring low power consumption. Along with its low gate charge and low capacitance, the DMP1005UFDF-13 is the perfect component for any application needing a reliable, low-power switching MOSFET.

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