DMP1045U-7 Allicdata Electronics

DMP1045U-7 Discrete Semiconductor Products

Allicdata Part #:

DMP1045U-7DITR-ND

Manufacturer Part#:

DMP1045U-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 12V 4A SOT23
More Detail: P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount SOT...
DataSheet: DMP1045U-7 datasheetDMP1045U-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1357pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP1045U-7 is a n-channel MOSFET transistor designed for high current and voltage applications. It is a three-terminal semiconductor device that conducts current when a given gate-to-source voltage is applied, enabling a low resistance path between the source and the drain terminals.

This particular MOSFET is designed for high current applications, allowing for currents up to 10A and source-drain voltages up to 55V. It is also a high voltage device with a drain-source breakdown voltage of 450V. The device has a low on-resistance of less than 0.12W and a low drain-source capacitance of just 20pF when the gate voltage is zero. This makes it particularly suitable for high frequency switching and signal processing applications.

The working principle of the DMP1045U-7 is based on the idea that a reverse bias voltage applied to the gate-source junction can effectively create an inversion layer of electrons at the surface of the device. This inversion layer allows for a low resistance path between the source and the drain terminals and when a given gate-source voltage is applied, current flows from the source to the drain.

The DMP1045U-7 is primarily used in power switching applications, where high currents and voltages are required. It is also used for signal processing applications as it provides a low on-resistance and low capacitance making it ideal for high-frequency switching. As it is a relatively robust device, it is often used in automotive applications, where it is exposed to harsh environmental conditions.

In conclusion, the DMP1045U-7 is a n-channel MOSFET transistor designed for high current and voltage applications. It is a three-terminal semiconductor device that conducts current when a given gate-to-source voltage is applied, enabling a low resistance path between the source and the drain terminals. It is mainly used in power switching and signal processing applications and is a relatively robust device, often used in automotive applications.

The specific data is subject to PDF, and the above content is for reference

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