DMP1045U-7 Discrete Semiconductor Products |
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| Allicdata Part #: | DMP1045U-7DITR-ND |
| Manufacturer Part#: |
DMP1045U-7 |
| Price: | $ 0.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 12V 4A SOT23 |
| More Detail: | P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount SOT... |
| DataSheet: | DMP1045U-7 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.59000 |
| 10 +: | $ 0.48000 |
| 100 +: | $ 0.37000 |
| 1000 +: | $ 0.24000 |
| 10000 +: | $ 0.12000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 800mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1357pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 15.8nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 4A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP1045U-7 is a n-channel MOSFET transistor designed for high current and voltage applications. It is a three-terminal semiconductor device that conducts current when a given gate-to-source voltage is applied, enabling a low resistance path between the source and the drain terminals.
This particular MOSFET is designed for high current applications, allowing for currents up to 10A and source-drain voltages up to 55V. It is also a high voltage device with a drain-source breakdown voltage of 450V. The device has a low on-resistance of less than 0.12W and a low drain-source capacitance of just 20pF when the gate voltage is zero. This makes it particularly suitable for high frequency switching and signal processing applications.
The working principle of the DMP1045U-7 is based on the idea that a reverse bias voltage applied to the gate-source junction can effectively create an inversion layer of electrons at the surface of the device. This inversion layer allows for a low resistance path between the source and the drain terminals and when a given gate-source voltage is applied, current flows from the source to the drain.
The DMP1045U-7 is primarily used in power switching applications, where high currents and voltages are required. It is also used for signal processing applications as it provides a low on-resistance and low capacitance making it ideal for high-frequency switching. As it is a relatively robust device, it is often used in automotive applications, where it is exposed to harsh environmental conditions.
In conclusion, the DMP1045U-7 is a n-channel MOSFET transistor designed for high current and voltage applications. It is a three-terminal semiconductor device that conducts current when a given gate-to-source voltage is applied, enabling a low resistance path between the source and the drain terminals. It is mainly used in power switching and signal processing applications and is a relatively robust device, often used in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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DMP1045U-7 Datasheet/PDF