DMP3105LVT-7

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The DMP3105LVT-7 is a type of single P-Channel Trench Power MOSFET that was developed by ON Semiconductor. It is designed for a wide range of hardworking and cost-effective applications, such as battery-operated equipment, memory circuits, computers, and system boards. It is a cost-effective solution that offers superior performance and reliability.

The DMP3105LVT-7 is comprised of a N-channel and a P-channel device that are both trench MOSFETs. Both devices have a drain to source breakdown voltage of 20V, a drain to source on-state resistance of 1.25Ω, and a maximum gate to source voltage of 7V. The devices also feature a very low RDS(ON) which is an important factor for power efficiency. This device is also capable of handling a load current up to 8 amps and comes with a wide range of features.

In terms of its physical dimensions, the DMP3105LVT-7 measures 4.45mm wide and 2.25mm high. It is capable of operating over a temperature range of -55°C to +150°C and features an optimized layout for easy mounting. This device also comes with excellent thermal characteristics, making it suitable for high-power applications.

The working principle of the DMP3105LVT-7 is fairly straightforward. When a gate voltage is applied to it, it opens the pass current to flow through the device. The more gate voltage that is applied, the more current will be allowed to flow through the device. When the gate voltage is removed, the device will remain in its closed state.

The application field of the DMP3105LVT-7 is varied. It can be used in applications ranging from battery-operated apps such as laptop computers and smartphones to power management circuits, digital systems, and LCD displays. Because of its low on-state resistance and wide temperature range, this power MOSFET is ideal for power-efficient battery-operated equipment. Additionally, the device’s excellent thermal characteristics make it suitable for automotive, industrial, and LED lighting applications.

In conclusion, the DMP3105LVT-7 is a cost-effective single P-channel trench power MOSFET developed by ON Semiconductor. It is optimized for a wide range of applications, including memory circuits, computers, and system boards. The device features a drain to source breakdown voltage of 20V, a drain to source on-state resistance of 1.25Ω, and a maximum gate to source voltage of 7V. In terms of its working principle, when a gate voltage is applied to it, it opens the pass current to flow through it and when the voltage is removed, the device will remain in its closed state. Its application field is varied and it can be used in a wide range of applications, ranging from battery-operated electronics to automotive and industrial systems.

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