DMPH6050SFGQ-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMPH6050SFGQ-13 is a type of Field-Effect Transistor (FET). A FET is a three-terminal semiconductor device which has an input and output circuit and an insulated gate that controls the current flow between the two. FETs can be used to amplify or switch signals. They are also commonly used in digital logic circuits and as logic cells.MOSFET is one type of FET and stands for Metal Oxide Semiconductor Field Effect Transistor. A MOSFET has four layers: a gate, a source, a drain and a substrate. The gate is the controlling element of the device and is formed of metal oxide. The source and the drain are the two terminals of the device. The substrate is the underlying semiconductor material. The channel connecting the source and drain is usually composed of silicon dioxide (SiO2) or other insulating materials such as silicon nitride (Si3N4).The particular MOSFET chip, the DMPH6050SFGQ-13, is a single-channel type that is commonly used in power switching, as it has a higher drain-source breakdown voltage than other types. It is also used for audio amplifiers, voltage converters, and DC-DC converters where high voltage and low current consumption is needed.The working principle of the DMPH6050SFGQ-13 is based on the modified version of the MOSFET which is known as the Both Density Channel (BDC) MOSFET. The BDC MOSFET utilizes the unique feature of the N-type MOSFET which is the double-gated structure. This allows for superior output characteristics and lower on-state resistance resulting in improved efficiency. The BDC MOSFETs are also well-suited for applications where high-voltage is needed such as automotive, industrial and telecom applications.When the gate voltage of the DMPH6050SFGQ-13 is low, the drain-source channel is off and no current flows through the channel. However, when the gate voltage is above the threshold voltage of the FET, then a current will flow between the source and the drain. This is because the gate voltage induces a charge on the N-type channel below the gate and a depletion region will be created in the vicinity of the N-type channel. This is known as the drain-source depletion layer and its width is proportional to the gate voltage.The DMPH6050SFGQ-13 is able to achieve a low on-state resistance and a high breakdown voltage which makes it suitable for many applications. This is due to the fact that its drain current increases linearly with gate voltage and the gate-source capacitance is reduced compared to the conventional MOSFETs. The current flowing through the drain is also highly predictable and stable even at higher gate voltages.In conclusion, the DMPH6050SFGQ-13 is a Single-Channel MOSFET which is commonly used in power switching applications such as audio amplifiers and voltage converters where its low on-state resistance and high breakdown voltage make it an ideal choice. Its working principle is based on the Both Density Channel (BDC) MOSFET, which utilizes the unique feature of the N-type MOSFET by producing a drain-source depletion layer whose width is proportional to the gate voltage. This allows for improved output characteristics and lower on-state resistance resulting in improved efficiency.

The specific data is subject to PDF, and the above content is for reference