DMTH6005LCT Allicdata Electronics
Allicdata Part #:

DMTH6005LCT-ND

Manufacturer Part#:

DMTH6005LCT

Price: $ 0.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 60V 100A TO220AB
More Detail: N-Channel 60V 100A (Tc) 2.8W (Ta), 125W (Tc) Throu...
DataSheet: DMTH6005LCT datasheetDMTH6005LCT Datasheet/PDF
Quantity: 1000
50 +: $ 0.72022
Stock 1000Can Ship Immediately
$ 0.8
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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DMTH6005LCT is a low-current, low-voltage device, specifically designed for use in automotive microcontrollers. This device is a series of NMOS transistor that exhibits excellent performance characteristics when used in wide-ranging applications. The DMTH6005LCT offers various advantages including low RDS(ON) resistance, high speed switching, low power consumption and highly reliable operation.

The DMTH6005LCT integrates a wide-range of features for improved performance. It has an example internal drain-source resistor that allows for temperature and supply voltage compensation, which further enhances its performance. It also uses a polybur-grain-oxide gate dielectric that allows for more efficient channel control as well as improved immunity to radiation. The integrated channel testing feature allows for enhanced characterization of the DMTH6005LCT, which allows for improved reliability during operation.

The DMTH6005LCT is a N-channel enhancement mode NMOS transistor, which means it can be depleted or enhanced according to the electrical currents that pass through it. When no voltage is applied across the gate and source, the current flow through the device is off and the device is considered depleted. When a voltage is applied across the source and gate, the current flow is turned on, enabling the device to act as an amplifier or a switch.

The primary application of the DMTH6005LCT is as a switch in a microcontroller application. The high speed switching abilities of the device, along with its low RDS(ON) resistance make it ideal for automotive applications where speed and low power consumption are required. The wide range of features integrated into the DMTH6005LCT also makes it appropriate for use in automotive power distribution applications, where efficient switching is required in a reliable manner.

The DMTH6005LCT can also be used as an amplifier in microcontroller applications. The polybur-oxide gate dielectric feature ensures that the device is able to operate in a highly efficient manner and amplify input signals in a highly reliable manner. The channel testing feature also allows for improved characterization of the device which further enhances the reliability of the device for multiple applications.

In conclusion, the DMTH6005LCT is a low-current, low-voltage device that offers excellent performance across a wide range of applications. Its low RDS(ON) resistance, high speed switching, low power consumption and highly reliable operation make it ideal for automotive applications that require high efficiency and low power consumption. The integrated features also make it suitable for multiple application uses, such as in automotive power distributions and microcontrollers.

The specific data is subject to PDF, and the above content is for reference

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