DS3050W-100# Allicdata Electronics
Allicdata Part #:

DS3050W-100#-ND

Manufacturer Part#:

DS3050W-100#

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 4M PARALLEL 256BGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: DS3050W-100# datasheetDS3050W-100# Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)
Base Part Number: DS3050W
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory has become increasingly important for various electronic devices. DS3050W-100# is one type of memory widely used for its good performance and reliability. In this article, we will take a look at the application field and working principle of DS3050W-100#.

DS3050W-100# can be used in the applications of consumer electronics, automotive electronics, telecommunications, industrial control, medical, defense and aerospace fields. These application fields need memory products that can operate over extended temperature ranges, have high reliability and endurance, and consume low energy. DS3050W-100# meet these requirements perfectly and excels in working in harsh environmental conditions.

The working principle of DS3050W-100# is quite simple. It uses static random access memory (SRAM) technology that allows data to be stored and retrieved in a specific address or region. When power is supplied to the chip, it can perform read or write operations in the specific memory address or memory region. The SRAM is based on a six-transistor cell or the so-called six-transistor gate array (6TGA), which ensures fast and efficient data retrieval and storage.

Its reliability is also excellent. It offers superior data densities as well as low power consumption. It is also designed to be highly reliable due to its advanced integrated circuits and advanced production processes. The chip has undergone a series of rigorous reliability tests and it can withstand a variety of vibration, shock and static tests with ease.

In short, DS3050W-100# has a wide application field and its working principle is quite simple. It is designed to provide superior reliability, low power consumption and high performance. It is a great choice for various electronic devices and can work in harsh environment conditions.

The specific data is subject to PDF, and the above content is for reference

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