Allicdata Part #: | DTA023YUBTLTR-ND |
Manufacturer Part#: |
DTA023YUBTL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V 0.2W SC85 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA023YUBTL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02891 |
6000 +: | $ 0.02514 |
15000 +: | $ 0.02137 |
30000 +: | $ 0.02011 |
75000 +: | $ 0.01886 |
150000 +: | $ 0.01676 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
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The DTA023YUBTL is a single, pre-biased, bipolar junction transistor (BJT). It has been designed specifically to address the needs of automotive, industrial, consumer, and communications applications. The device is based on a high voltage, low current technology designed to switch electronic signals in both digital and analog applications.
The DTA023YUBTL has a collector-emitter voltage rating of 60V and a rated collector current of 35mA. The device also has a maximum collector-emitter voltage rating of up to 100V and a collector-base breakdown voltage rating of up to 70V. These ratings make DTA023YUBTL suitable for a wide variety of applications such as automotive engine control, consumer electronics, and audio/video switching.
The DTA023YUBTL is also designed with a wide range of features that make it suitable for a variety of applications. The device is built with a low on-state resistance and low gate leakage current, which allow for better power efficiency and improved switching performance. In addition, the device has a very low power dissipation, which makes it suitable for applications that require low power consumption.
The working principle of the DTA023YUBTL is based on bipolar junction transistor (BJT) technology. BJTs are devices made up of three layers: an emitter, base, and collector. The BJT is a current-controlled device; current entering the base will control current flowing through the emitter and collector. The internal structure of a BJT is drawn below.
The voltage present at the base of the BJT controls the amount of current that flows from the emitter to the collector. The BJT has two states, the active state (on) and the cut-off state (off). In the active state, the base-emitter and base-collector voltages are small and current flows from the emitter to the collector. In the cut-off state, the voltage at the base is reversed and no current flows between forward the emitter and collector.
The DTA023YUBTL is a single, pre-biased BJT, meaning that the collector and emitter have a voltage pre-applied. When this voltage is increased, the BJT changes its state from off to on. When the voltage is decreased, the BJT changes its state from on to off. This allows the BJT to be used as a switch, making it a valuable component in digital and analog designs.
In addition, the DTA023YUBTL has several other features that make it suitable for many different applications. The device has a high switching current rating, which allows it to be used in applications that require higher current to be switched. The device also has high switching speed and lower capacitive load, which helps reduce power dissipation. Finally, the DTA023YUBTL has a low input bias current, which is important for a device that must switch low-level signals.
The DTA023YUBTL is an important integrated circuit that is used in many different applications. It has a low on-state resistance, low gate leakage current, high switching current rating, and fast switching speeds, which make it suitable for a wide variety of uses. The device is based on BJT technology, which makes it suitable for both digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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