Allicdata Part #: | DTA143TMFHAT2LTR-ND |
Manufacturer Part#: |
DTA143TMFHAT2L |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIGITAL TRANSISTOR PNP 50V 100MA |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143TMFHAT2L Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01985 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA143TMFHAT2L Transistors - Bipolar (BJT) - Single, Pre-Biased, is a type of BJT, or Bipolar Junction Transistor. This device is used for various types of switches, amplifiers, and other semiconductor applications, and provides an ideal combination of high-gain current switching and low power dissipation.
The DTA143TMFHAT2L uses a single transistor with a built-in zener diode for base bias. This feature enables the device to operate in the saturated region for small gate signals, eliminating gate-drive supply current and reducing power consumption.
The device is designed to perform well in applications where a wide range of switching times and very fast turn-off times are required. The device is also well suited for use in logic circuits, as it provides excellent switching times with low-power logic levels.
The working principle of the device is based on the fact that the current is passed through the transistor by applying a voltage to the base, creating a voltage drop. This voltage drop creates an emitter-collector current, which is passed through the transistor. The more voltage applied to the base, the more the base current flows, allowing for greater levels of current amplification.
The DTA143TMFHAT2L is a versatile device that can be used in a wide range of applications. It is commonly used in high power, high-frequency circuit applications such as switching, amplifiers, and logic circuits, for which its fast switching times, low power consumption and excellent thermal performance can be beneficial.
The DTA143TMFHAT2L is also commonly used in microwave applications, as its broad-band semiconductor construction allows for high-level noise and signal attenuation. In addition, its fast switching times can be extremely helpful in applications requiring high-speed operations.
In general, the DTA143TMFHAT2L is a good choice for applications requiring fast switching, low power consumption, and excellent thermal performance. It can also provide high-level noise and signal attenuation, making it a good choice for microwave applications. With its wide-range of potential applications, the DTA143TMFHAT2L will continue to be a popular choice among engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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