Allicdata Part #: | DTC023EMT2LTR-ND |
Manufacturer Part#: |
DTC023EMT2L |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC023EMT2L Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01985 |
16000 +: | $ 0.01687 |
24000 +: | $ 0.01588 |
56000 +: | $ 0.01489 |
200000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
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The DTC023EMT2L is a Power MOSFET transistor, which belongs to the single, pre-biased Bipolar Junction Transistor (BJT) family. It is designed to provide high efficiency and superior thermal performance characteristics in a wide range of applications.
Due to its extremely low on-resistance, this bipolar junction transistor can switch DC voltages at very low voltages and very high currents, allowing for higher power output in smaller packages and higher switching speeds. Additionally, it is characterized by very low capacitance, which helps it achieve excellent switching performance even at high gate voltages.
The DTC023EMT2L has been designed to support a wide range of applications, including power conversion, high-frequency circuits, and DC/DC converters. It is able to handle very high-frequency signals, such as those found in RF and microwave circuits, and is suitable for use in portable electronics as well as in low-voltage, low-power applications. Furthermore, it can be used as an electronic switch to provide wide on-off control and modulation of power signals in relay, timer, and sensor based applications.
On the working principle side, the DTC023EMT2L is a voltage controlled device, which means that the operation of the MOSFET depends on the voltage applied to the gate terminal. This voltage is referred to as the ".drain-source bias voltage", and acts as a control for the current flowing through the device. When the gate voltage is increased, the current will increase, and when the gate voltage is decreased the current will decrease. The drain voltage will remain constant throughout.
The main feature of the DTC023EMT2L is that it is pre-biased. This means that the drain and source terminals already have voltages applied to them, resulting in a faster switching speed. This helps reduce the device\'s power dissipation and allows it to use lower power in applications. Additionally, the pre-bias voltage is set to match the desired operating voltage of the MOSFET, ensuring an efficient operation.
In summary, the DTC023EMT2L is a single, pre-biased bipolar junction transistor that is designed for a wide range of applications, from switching DC voltages at very low voltages and very high currents to providing wide on-off control and modulation of power signals in relay, timer, and sensor based applications. It is capable of high frequency signals, making it suitable for use in RF and microwave circuits, and its low capacitance helps it achieve excellent switching performance even at high gate voltages. Its pre-bias voltage is set to match the desired operating voltage of the MOSFET, helping increase machine system efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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