Allicdata Part #: | DTC114TCAT116TR-ND |
Manufacturer Part#: |
DTC114TCAT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 100MA 50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC114TCAT116 Datasheet/PDF |
Quantity: | 3000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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A DTC114TCAT116 transistor is a type of single, pre-biased bipolar junction transistor (BJT). It is commonly used in a variety of applications such as in amplifiers, converters, oscillators, low frequency amplifiers and power control circuits. The DTC114TCAT116 is designed for use in both through-hole and surface mount devices.
The DTC114TCAT116 consists of two NPN transistors, the collector region (N4) and the emitter region (N5). The base region (N3) is connected to the emitter region via an integrated resistor, providing a fixed biasing. This resistor sets the transistor´s operating current and voltage, and is usually specified according to the application.
The collector of the DTC114TCAT116 is connected to the emitter through a PN junction. An external bias voltage applied to the collector-base junction sets the collector-emitter operating current. When this biasing voltage is less than the threshold voltage set by the internal resistor, the collector-emitter current is limited and the transistor is in its quiescent state.
When the external bias is increased, the collector-emitter current increases and the transistor passes out of its quiescent state and conducts. The collector-emitter voltage then adjusts according to the current and the internal resistor bias. The saturation voltage is limited by the base resistor and is usually set to 0.65V.
The DTC114TCAT116 has a wide operating temperature range, which makes it suitable for a wide range of applications. It is also designed to be highly process-independent, meaning that it can be used in processes with slight variations in voltage, temperature and process recipes. Its main application is in amplifiers, converters, power control circuits, oscillators and low frequency amplifiers.
To summarise, the DTC114TCAT116 is a single, pre-biased type of bipolar junction transistor which is used in a variety of applications, such as amplifiers, converters, oscillators, low frequency amplifiers and power control circuits. It has an integrated resistor which sets the current and voltage, and its collector-emitter voltage is limited by the base resistor. It is designed to be highly process-independent and has a wide operating temperature range, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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